Observation of magnetoelectric effect in Cr2O3/Pt/Co thin film system

T. Ashida; M. Oida; N. Shimomura; T. Nozaki; T. Shibata; M. Sahashi

doi:10.1063/1.4871515

Observation of magnetoelectric effect in Cr₂O₃/Pt/Co thin film system

T. Ashida, M. Oida, N. Shimomura, T. Nozaki, T. Shibata, M. Sahashi

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

We investigate the magnetic, electric, and magnetoelectric properties of a Cr₂O₃ thin film system that was deposited by radiofrequency magnetron sputtering. The temperature dependence of the magnetic susceptibility of our Cr₂O₃ film is similar to that of bulk Cr₂O₃, which indicates a small oxygen non-stoichiometry in the film. The Cr₂O₃ film exhibits high AC resistivity (∼10⁹ Xcm) and low leakage current (4.0×10^-5 A/cm² at E=80 kV/cm). Finally, we demonstrate magnetoelectric switching of the exchange bias using the Cr2O3/Pt/Co all-thin-film system. By changing the direction of the electric field during the magnetoelectric field cooling process, the exchange bias field was changed symmetrically from -160 Oe to +160Oe, which represents the switching of the antiferromagnetic domain of Cr₂O₃.

Original language	English
Article number	152409
Journal	Applied Physics Letters
Volume	104
Issue number	15
DOIs	https://doi.org/10.1063/1.4871515
Publication status	Published - 2014 Apr 14

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4871515

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title = "Observation of magnetoelectric effect in Cr2O3/Pt/Co thin film system",

abstract = "We investigate the magnetic, electric, and magnetoelectric properties of a Cr2O3 thin film system that was deposited by radiofrequency magnetron sputtering. The temperature dependence of the magnetic susceptibility of our Cr2O3 film is similar to that of bulk Cr2O3, which indicates a small oxygen non-stoichiometry in the film. The Cr2O3 film exhibits high AC resistivity (∼109 Xcm) and low leakage current (4.0×10-5 A/cm2 at E=80 kV/cm). Finally, we demonstrate magnetoelectric switching of the exchange bias using the Cr2O3/Pt/Co all-thin-film system. By changing the direction of the electric field during the magnetoelectric field cooling process, the exchange bias field was changed symmetrically from -160 Oe to +160Oe, which represents the switching of the antiferromagnetic domain of Cr2O3.",

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T1 - Observation of magnetoelectric effect in Cr2O3/Pt/Co thin film system

AU - Ashida, T.

AU - Oida, M.

AU - Shimomura, N.

AU - Nozaki, T.

AU - Shibata, T.

AU - Sahashi, M.

PY - 2014/4/14

Y1 - 2014/4/14

N2 - We investigate the magnetic, electric, and magnetoelectric properties of a Cr2O3 thin film system that was deposited by radiofrequency magnetron sputtering. The temperature dependence of the magnetic susceptibility of our Cr2O3 film is similar to that of bulk Cr2O3, which indicates a small oxygen non-stoichiometry in the film. The Cr2O3 film exhibits high AC resistivity (∼109 Xcm) and low leakage current (4.0×10-5 A/cm2 at E=80 kV/cm). Finally, we demonstrate magnetoelectric switching of the exchange bias using the Cr2O3/Pt/Co all-thin-film system. By changing the direction of the electric field during the magnetoelectric field cooling process, the exchange bias field was changed symmetrically from -160 Oe to +160Oe, which represents the switching of the antiferromagnetic domain of Cr2O3.

AB - We investigate the magnetic, electric, and magnetoelectric properties of a Cr2O3 thin film system that was deposited by radiofrequency magnetron sputtering. The temperature dependence of the magnetic susceptibility of our Cr2O3 film is similar to that of bulk Cr2O3, which indicates a small oxygen non-stoichiometry in the film. The Cr2O3 film exhibits high AC resistivity (∼109 Xcm) and low leakage current (4.0×10-5 A/cm2 at E=80 kV/cm). Finally, we demonstrate magnetoelectric switching of the exchange bias using the Cr2O3/Pt/Co all-thin-film system. By changing the direction of the electric field during the magnetoelectric field cooling process, the exchange bias field was changed symmetrically from -160 Oe to +160Oe, which represents the switching of the antiferromagnetic domain of Cr2O3.

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Observation of magnetoelectric effect in Cr₂O₃/Pt/Co thin film system

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