Observation of Magnetoresistance Effect in n-Type Non-Degenerate Germanium with Co2Fe0.4Mn0.6Si Heusler Alloy Electrodes

Takeo Koike; Mikihiko Oogane; Tetsurou Takada; Hidekazu Saito; Yasuo Ando

doi:10.1109/TMAG.2017.2704780

Observation of Magnetoresistance Effect in n-Type Non-Degenerate Germanium with Co₂Fe_0.4Mn_0.6Si Heusler Alloy Electrodes

Takeo Koike, Mikihiko Oogane, Tetsurou Takada, Hidekazu Saito, Yasuo Ando

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The local 3-terminal magnetoresistance properties of n-Ge/MgO/Co₂Fe_0.4Mn_0.6Si lateral spin-valve devices were systematically investigated. In the spin extraction condition, clear steep voltage changes were successfully observed. We measured the bias voltage and temperature dependences of the spin resistance-area product. At a high bias voltage, the spin signal increased with increasing voltage, reaching a maximum value of 7.0 Ωμm² at V_bias = 663 mV. The signal decreased with increasing temperature but was still observed up to 160 K.

Original language	English
Article number	7929336
Journal	IEEE Transactions on Magnetics
Volume	53
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2017.2704780
Publication status	Published - 2017 Nov

Keywords

Spin injection in semiconductor (SC)
spin transport

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title = "Observation of Magnetoresistance Effect in n-Type Non-Degenerate Germanium with Co2Fe0.4Mn0.6Si Heusler Alloy Electrodes",

abstract = "The local 3-terminal magnetoresistance properties of n-Ge/MgO/Co2Fe0.4Mn0.6Si lateral spin-valve devices were systematically investigated. In the spin extraction condition, clear steep voltage changes were successfully observed. We measured the bias voltage and temperature dependences of the spin resistance-area product. At a high bias voltage, the spin signal increased with increasing voltage, reaching a maximum value of 7.0 Ωμm2 at Vbias = 663 mV. The signal decreased with increasing temperature but was still observed up to 160 K.",

keywords = "Spin injection in semiconductor (SC), spin transport",

author = "Takeo Koike and Mikihiko Oogane and Tetsurou Takada and Hidekazu Saito and Yasuo Ando",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

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T1 - Observation of Magnetoresistance Effect in n-Type Non-Degenerate Germanium with Co2Fe0.4Mn0.6Si Heusler Alloy Electrodes

AU - Koike, Takeo

AU - Oogane, Mikihiko

AU - Takada, Tetsurou

AU - Saito, Hidekazu

AU - Ando, Yasuo

PY - 2017/11

Y1 - 2017/11

N2 - The local 3-terminal magnetoresistance properties of n-Ge/MgO/Co2Fe0.4Mn0.6Si lateral spin-valve devices were systematically investigated. In the spin extraction condition, clear steep voltage changes were successfully observed. We measured the bias voltage and temperature dependences of the spin resistance-area product. At a high bias voltage, the spin signal increased with increasing voltage, reaching a maximum value of 7.0 Ωμm2 at Vbias = 663 mV. The signal decreased with increasing temperature but was still observed up to 160 K.

AB - The local 3-terminal magnetoresistance properties of n-Ge/MgO/Co2Fe0.4Mn0.6Si lateral spin-valve devices were systematically investigated. In the spin extraction condition, clear steep voltage changes were successfully observed. We measured the bias voltage and temperature dependences of the spin resistance-area product. At a high bias voltage, the spin signal increased with increasing voltage, reaching a maximum value of 7.0 Ωμm2 at Vbias = 663 mV. The signal decreased with increasing temperature but was still observed up to 160 K.

KW - Spin injection in semiconductor (SC)

KW - spin transport

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

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ER -

Observation of Magnetoresistance Effect in n-Type Non-Degenerate Germanium with Co₂Fe_0.4Mn_0.6Si Heusler Alloy Electrodes

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Keywords

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