The local 3-terminal magnetoresistance properties of n-Ge/MgO/Co2Fe0.4Mn0.6Si lateral spin-valve devices were systematically investigated. In the spin extraction condition, clear steep voltage changes were successfully observed. We measured the bias voltage and temperature dependences of the spin resistance-area product. At a high bias voltage, the spin signal increased with increasing voltage, reaching a maximum value of 7.0 Ωμm2 at Vbias = 663 mV. The signal decreased with increasing temperature but was still observed up to 160 K.
- Spin injection in semiconductor (SC)
- spin transport