Observation of momentum space semi-localization in Si-doped β-Ga 2O3

P. Richard, T. Sato, S. Souma, K. Nakayama, H. W. Liu, K. Iwaya, T. Hitosugi, H. Aida, H. Ding, T. Takahashi

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We performed an angle-resolved photoemission spectroscopy study of Si-doped β Ga2O3. We observed very small photoemission intensity near the Fermi level corresponding to non-dispersive states assigned to Si impurities. We show evidence for a quantization of these states that is accompanied by a confinement in the momentum space consistent with a real-space finite confinement observed in a previous scanning tunneling microscopy study. Our results suggest that this semi-localization in the conjugate spaces plays a crucial role in the electronic conduction of this material.

Original languageEnglish
Article number232105
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2012 Dec 3


Dive into the research topics of 'Observation of momentum space semi-localization in Si-doped β-Ga 2O3'. Together they form a unique fingerprint.

Cite this