Abstract
Persistent spectral hole burning (PSHB) has been observed at 110 K in (Formula presented) exchanged (Formula presented) β″-alumina crystals. This is the highest burning temperature for PSHB in (Formula presented) doped materials. It is found that the long lived holes at high temperature are caused by light-induced local motion of ions surrounding the (Formula presented) ions. The results both of hole relaxation and temperature cycling measurements can be well interpreted by a hopping model with a Gaussian distributed barrier height.
| Original language | English |
|---|---|
| Pages (from-to) | 8283-8286 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 53 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 1996 |