Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements

Terutaka Goto; Hiroshi Yamada-Kaneta; Yasuhiro Saito; Yuichi Nemoto; Koji Sato; Koichi Kakimoto; Shintaro Nakamura

doi:10.1149/1.2355772

Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements

Terutaka Goto, Hiroshi Yamada-Kaneta, Yasuhiro Saito, Yuichi Nemoto, Koji Sato, Koichi Kakimoto, Shintaro Nakamura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

We have succeeded in direct observation of isolated vacancies in high purity silicon crystals grown by a floating zone (FZ) method using low-temperature ultrasonic measurements. The softening of elastic constants below 20 K down to 20 mK is observed in nondoped FZ silicon and B-doped FZ silicon. This softening is caused by an interaction of electric quadrupoles of triply degenerate vacancy orbital to elastic strains of ultrasonic waves. The lowtemperature elastic softening measured by ultrasonic methods verifies existence of the isolated vacancies in Pv-region distributed in pure crystal of a Czockralski ingot. The ultrasonic measurement of the low-temperature softening is a faithful probe for vacancy evaluation in high purity silicon crystals in commercial base. copyright The Electrochemical Society.

Original language	English
Title of host publication	High Purity Silicon 9
Publisher	Electrochemical Society Inc.
Pages	375-385
Number of pages	11
Edition	4
ISBN (Electronic)	1566775043
DOIs	https://doi.org/10.1149/1.2355772
Publication status	Published - 2006
Event	High Purity Silicon 9 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

Publication series

Name	ECS Transactions
Number	4
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	High Purity Silicon 9 - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	06/10/29 → 06/11/3

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10.1149/1.2355772

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title = "Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements",

abstract = "We have succeeded in direct observation of isolated vacancies in high purity silicon crystals grown by a floating zone (FZ) method using low-temperature ultrasonic measurements. The softening of elastic constants below 20 K down to 20 mK is observed in nondoped FZ silicon and B-doped FZ silicon. This softening is caused by an interaction of electric quadrupoles of triply degenerate vacancy orbital to elastic strains of ultrasonic waves. The lowtemperature elastic softening measured by ultrasonic methods verifies existence of the isolated vacancies in Pv-region distributed in pure crystal of a Czockralski ingot. The ultrasonic measurement of the low-temperature softening is a faithful probe for vacancy evaluation in high purity silicon crystals in commercial base. copyright The Electrochemical Society.",

author = "Terutaka Goto and Hiroshi Yamada-Kaneta and Yasuhiro Saito and Yuichi Nemoto and Koji Sato and Koichi Kakimoto and Shintaro Nakamura",

note = "Funding Information: support of the Swiss National Fund is greatly appreciated.; High Purity Silicon 9 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

year = "2006",

doi = "10.1149/1.2355772",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "4",

pages = "375--385",

booktitle = "High Purity Silicon 9",

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Goto, T, Yamada-Kaneta, H, Saito, Y, Nemoto, Y, Sato, K, Kakimoto, K & Nakamura, S 2006, Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements. in High Purity Silicon 9. 4 edn, ECS Transactions, no. 4, vol. 3, Electrochemical Society Inc., pp. 375-385, High Purity Silicon 9 - 210th Electrochemical Society Meeting, Cancun, Mexico, 06/10/29. https://doi.org/10.1149/1.2355772

Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements. / Goto, Terutaka; Yamada-Kaneta, Hiroshi; Saito, Yasuhiro et al.
High Purity Silicon 9. 4. ed. Electrochemical Society Inc., 2006. p. 375-385 (ECS Transactions; Vol. 3, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements

AU - Goto, Terutaka

AU - Yamada-Kaneta, Hiroshi

AU - Saito, Yasuhiro

AU - Nemoto, Yuichi

AU - Sato, Koji

AU - Kakimoto, Koichi

AU - Nakamura, Shintaro

N1 - Funding Information: support of the Swiss National Fund is greatly appreciated.

PY - 2006

Y1 - 2006

N2 - We have succeeded in direct observation of isolated vacancies in high purity silicon crystals grown by a floating zone (FZ) method using low-temperature ultrasonic measurements. The softening of elastic constants below 20 K down to 20 mK is observed in nondoped FZ silicon and B-doped FZ silicon. This softening is caused by an interaction of electric quadrupoles of triply degenerate vacancy orbital to elastic strains of ultrasonic waves. The lowtemperature elastic softening measured by ultrasonic methods verifies existence of the isolated vacancies in Pv-region distributed in pure crystal of a Czockralski ingot. The ultrasonic measurement of the low-temperature softening is a faithful probe for vacancy evaluation in high purity silicon crystals in commercial base. copyright The Electrochemical Society.

AB - We have succeeded in direct observation of isolated vacancies in high purity silicon crystals grown by a floating zone (FZ) method using low-temperature ultrasonic measurements. The softening of elastic constants below 20 K down to 20 mK is observed in nondoped FZ silicon and B-doped FZ silicon. This softening is caused by an interaction of electric quadrupoles of triply degenerate vacancy orbital to elastic strains of ultrasonic waves. The lowtemperature elastic softening measured by ultrasonic methods verifies existence of the isolated vacancies in Pv-region distributed in pure crystal of a Czockralski ingot. The ultrasonic measurement of the low-temperature softening is a faithful probe for vacancy evaluation in high purity silicon crystals in commercial base. copyright The Electrochemical Society.

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T2 - High Purity Silicon 9 - 210th Electrochemical Society Meeting

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Observation of vacancy in high purity silicon crystal using low-temperature ultrasonic measurements

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