Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure

Weitao Cheng; Akinobu Teramoto; Tadahiro Ohmi

Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure

Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we demonstrate that the advantages of obvious improvement o f the mobility and current drivability at high temperatures and the greatly suppressed self-heating effects in accumulation mode SOI power LDMOSFETs. We reveal the mechanisms of these advantages are resulted from the bulk current and accumulation mode device structure and propose that the accumulation mode device structure is very useful to realize high performance SOI power LDMOSFETs.

Original language	English
Title of host publication	2009 13th European Conference on Power Electronics and Applications, EPE '09
Publication status	Published - 2009 Dec 1
Event	2009 13th European Conference on Power Electronics and Applications, EPE '09 - Barcelona, Spain Duration: 2009 Sept 8 → 2009 Sept 10

Other

Other	2009 13th European Conference on Power Electronics and Applications, EPE '09
Country/Territory	Spain
City	Barcelona
Period	09/9/8 → 09/9/10

Keywords

Accumulation mode
Bulk current
High temperature
LDMOSFET
Self-heating
Silicon-on-insulator

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Cite this

Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure. / Cheng, Weitao; Teramoto, Akinobu; Ohmi, Tadahiro.
2009 13th European Conference on Power Electronics and Applications, EPE '09. 2009. 5279027.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cheng, W, Teramoto, A & Ohmi, T 2009, Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure. in 2009 13th European Conference on Power Electronics and Applications, EPE '09., 5279027, 2009 13th European Conference on Power Electronics and Applications, EPE '09, Barcelona, Spain, 09/9/8.

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AB - In this paper, we demonstrate that the advantages of obvious improvement o f the mobility and current drivability at high temperatures and the greatly suppressed self-heating effects in accumulation mode SOI power LDMOSFETs. We reveal the mechanisms of these advantages are resulted from the bulk current and accumulation mode device structure and propose that the accumulation mode device structure is very useful to realize high performance SOI power LDMOSFETs.

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KW - LDMOSFET

KW - Self-heating

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BT - 2009 13th European Conference on Power Electronics and Applications, EPE '09

T2 - 2009 13th European Conference on Power Electronics and Applications, EPE '09

Y2 - 8 September 2009 through 10 September 2009

ER -

Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure

Abstract

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Keywords

ASJC Scopus subject areas

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