Off-stoichiometry effect on thermoelectric properties of the new p-type sulfides compounds Cu2CoGeS4

Cédric Bourgès; Rabih Al Rahal Al Orabi; Yuzuru Miyazaki

doi:10.1016/j.jallcom.2020.154240

Off-stoichiometry effect on thermoelectric properties of the new p-type sulfides compounds Cu₂CoGeS₄

Cédric Bourgès, Rabih Al Rahal Al Orabi, Yuzuru Miyazaki

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

An in-depth analysis of Cu_2+xCo_1-xGeS₄ (CCGS) has been performed to illustrate its potential as a new p-type compound for thermoelectric (TE) applications with suitable thermal stability. An intrinsic semiconductor behavior is reported with attractive TE properties, characterized by a large Seebeck coefficient and intrinsic low thermal conductivity. Band structures and elastic properties calculations sustained the experimental observations and revealed the dominant role of Cu/Co ratio in electrical transport properties. A promising TE performance is achieved through a carrier concentration tuning by Cu/Co ratio control, with a zT = 0.37 at 725 K resulting from combined large PF enhancement and a reduced κ.

Original language	English
Article number	154240
Journal	Journal of Alloys and Compounds
Volume	826
DOIs	https://doi.org/10.1016/j.jallcom.2020.154240
Publication status	Published - 2020 Jun 15

Keywords

CuCoGeS
DFT
Spark plasma sintering
Sulfide
Thermoelectric

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2020.154240

Cite this

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title = "Off-stoichiometry effect on thermoelectric properties of the new p-type sulfides compounds Cu2CoGeS4",

abstract = "An in-depth analysis of Cu2+xCo1-xGeS4 (CCGS) has been performed to illustrate its potential as a new p-type compound for thermoelectric (TE) applications with suitable thermal stability. An intrinsic semiconductor behavior is reported with attractive TE properties, characterized by a large Seebeck coefficient and intrinsic low thermal conductivity. Band structures and elastic properties calculations sustained the experimental observations and revealed the dominant role of Cu/Co ratio in electrical transport properties. A promising TE performance is achieved through a carrier concentration tuning by Cu/Co ratio control, with a zT = 0.37 at 725 K resulting from combined large PF enhancement and a reduced κ.",

keywords = "CuCoGeS, DFT, Spark plasma sintering, Sulfide, Thermoelectric",

author = "C{\'e}dric Bourg{\`e}s and {Al Rahal Al Orabi}, Rabih and Yuzuru Miyazaki",

note = "Funding Information: This work was supported by the International Research Fellow of Japan Society for the Promotion of Science ( PE17748 ). Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

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T1 - Off-stoichiometry effect on thermoelectric properties of the new p-type sulfides compounds Cu2CoGeS4

AU - Bourgès, Cédric

AU - Al Rahal Al Orabi, Rabih

AU - Miyazaki, Yuzuru

PY - 2020/6/15

Y1 - 2020/6/15

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AB - An in-depth analysis of Cu2+xCo1-xGeS4 (CCGS) has been performed to illustrate its potential as a new p-type compound for thermoelectric (TE) applications with suitable thermal stability. An intrinsic semiconductor behavior is reported with attractive TE properties, characterized by a large Seebeck coefficient and intrinsic low thermal conductivity. Band structures and elastic properties calculations sustained the experimental observations and revealed the dominant role of Cu/Co ratio in electrical transport properties. A promising TE performance is achieved through a carrier concentration tuning by Cu/Co ratio control, with a zT = 0.37 at 725 K resulting from combined large PF enhancement and a reduced κ.

KW - CuCoGeS

KW - DFT

KW - Spark plasma sintering

KW - Sulfide

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