TY - GEN
T1 - Ohmic Contact Formation on N-Polar n-GaN Surfaces Exposed by Wafer Bonding and Back Surface Process
AU - Toka, S.
AU - Liang, J.
AU - Suemitsu, T.
AU - Shigekawa, N.
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - We expose N-polar surfaces of n-GaN layers epitaxially grown on Si (111) substrates by wafer bonding their Ga-polar surfaces and applying the back surface process, and form ohmic contacts on their N-polar surfaces by evaporating Ti/Al/Ti/Au and annealing. The contact resistance for the N-polar surfaces is approximately over 100 times higher than that for the Ga-polar surfaces of the same n-GaN layers, which suggests that the wafer bonding technologies are promising for fabricating advanced devices on N-polar surfaces.
AB - We expose N-polar surfaces of n-GaN layers epitaxially grown on Si (111) substrates by wafer bonding their Ga-polar surfaces and applying the back surface process, and form ohmic contacts on their N-polar surfaces by evaporating Ti/Al/Ti/Au and annealing. The contact resistance for the N-polar surfaces is approximately over 100 times higher than that for the Ga-polar surfaces of the same n-GaN layers, which suggests that the wafer bonding technologies are promising for fabricating advanced devices on N-polar surfaces.
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U2 - 10.1109/LTB-3D64053.2024.10774114
DO - 10.1109/LTB-3D64053.2024.10774114
M3 - Conference contribution
AN - SCOPUS:85214979911
T3 - 2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
BT - 2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
Y2 - 30 October 2024 through 1 November 2024
ER -