@article{12456fcd637648bfba5edf53c4eff893,
title = "On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates",
abstract = "The microscopic strain fluctuation in strained-Si grown on SiGe-on-insulator (SGOI) and SiGe virtual substrates was investigated. A periodic strain distribution originating from cross-hatch pattern of the substrate was observed in the sample of virtual substrate. No such pattern was observed in SGOI and was found to be free from dislocation network. The origin of strain fluctuation of strained Si were found to compositional fluctuation of SOGI and virtual substrate.",
author = "Kentaro Kutsukake and Noritaka Usami and Toru Ujihara and Kozo Fujiwara and Gen Sazaki and Kazuo Nakajima",
note = "Funding Information: The authors would like to acknowledge K. Sawano, B. P. Zhang, and W. Pan for fruitful discussions. A. C. Alguno is also acknowledged for his critical reading of this manuscript. This work was supported in part by Industrial Technology Research Grant Program in 2003 from NEDO of Japan and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology.",
year = "2004",
month = aug,
day = "23",
doi = "10.1063/1.1784036",
language = "English",
volume = "85",
pages = "1335--1337",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",
}