TY - GEN
T1 - Optical absorption, photo-luminescence and miniband formation of a highly ordered and dense 2-dimensional array of Si nanodisks for quantum dot solar cells
AU - Igarashi, Makoto
AU - Huang, Chi Hsien
AU - Wang, Xuan Yu
AU - Budiman, Mohd Fairuz
AU - Tamura, Yosuke
AU - Kiba, Takayuki
AU - Murayama, Akihiro
AU - Kaizu, Toshiyuki
AU - Okada, Yoshitaka
AU - Samukawa, Seiji
PY - 2011/12/1
Y1 - 2011/12/1
N2 - We fabricated a highly ordered and dense 2-dimensional array of Si nanodisks (NDs) with our new processes using a bio-template and damage-free neutral beam. Direct-bandgap-like photon emissions were observed from the Si-NDs due to quantum confinement by using time resolved PL measurements. The PL time-profiles were identified in three components (nanosecond region or less) originated in lateral coupling of wave-function i.e. miniband state and localized state in silicon nanodisks. Furthermore, The I-V characteristics of the 2D array of Si-NDs using conductive atomic force microscopy (AFM) indicated that the electronic states of the neighboring NDs were coupled and formed minibands in the 2D array. We also fabricated Si-NDs with an inter-layer of SiC, and found that the SiC matrix could yield a high absorption coefficient without any shift in the bandgap energy (Eg) of the Si-ND structure.
AB - We fabricated a highly ordered and dense 2-dimensional array of Si nanodisks (NDs) with our new processes using a bio-template and damage-free neutral beam. Direct-bandgap-like photon emissions were observed from the Si-NDs due to quantum confinement by using time resolved PL measurements. The PL time-profiles were identified in three components (nanosecond region or less) originated in lateral coupling of wave-function i.e. miniband state and localized state in silicon nanodisks. Furthermore, The I-V characteristics of the 2D array of Si-NDs using conductive atomic force microscopy (AFM) indicated that the electronic states of the neighboring NDs were coupled and formed minibands in the 2D array. We also fabricated Si-NDs with an inter-layer of SiC, and found that the SiC matrix could yield a high absorption coefficient without any shift in the bandgap energy (Eg) of the Si-ND structure.
UR - http://www.scopus.com/inward/record.url?scp=84861088362&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861088362&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2011.6186706
DO - 10.1109/PVSC.2011.6186706
M3 - Conference contribution
AN - SCOPUS:84861088362
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3511
EP - 3515
BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Y2 - 19 June 2011 through 24 June 2011
ER -