Optical absorption spectra of β-FeSi2 under pressure

K. Takarabe; R. Teranisi; J. Oinuma; Y. Mori; T. Suemasu; S. Chichibu; F. Hasegawa

doi:10.1002/1521-3951(200101)223:1<259::AID-PSSB259>3.0.CO;2-F

Optical absorption spectra of β-FeSi₂ under pressure

K. Takarabe, R. Teranisi, J. Oinuma, Y. Mori, T. Suemasu, S. Chichibu, F. Hasegawa

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

By a high pressure optical absorption experiment on epitaxially grown β-FeSi₂ on Si (001) substrate, it is reported that the evaluated linear pressure coefficient of the direct band gap is smaller than that of common semiconductors.

Original language	English
Pages (from-to)	259-263
Number of pages	5
Journal	Physica Status Solidi (B): Basic Research
Volume	223
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200101)223:1<259::AID-PSSB259>3.0.CO;2-F
Publication status	Published - 2001 Jan

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title = "Optical absorption spectra of β-FeSi2 under pressure",

abstract = "By a high pressure optical absorption experiment on epitaxially grown β-FeSi2 on Si (001) substrate, it is reported that the evaluated linear pressure coefficient of the direct band gap is smaller than that of common semiconductors.",

author = "K. Takarabe and R. Teranisi and J. Oinuma and Y. Mori and T. Suemasu and S. Chichibu and F. Hasegawa",

year = "2001",

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AU - Takarabe, K.

AU - Teranisi, R.

AU - Oinuma, J.

AU - Mori, Y.

AU - Suemasu, T.

AU - Chichibu, S.

AU - Hasegawa, F.

PY - 2001/1

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N2 - By a high pressure optical absorption experiment on epitaxially grown β-FeSi2 on Si (001) substrate, it is reported that the evaluated linear pressure coefficient of the direct band gap is smaller than that of common semiconductors.

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Optical absorption spectra of β-FeSi₂ under pressure

Abstract

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