Optical and electrical properties of AgIn(SSe)2 crystals

Kenji Yoshino; Naoji Mitani; Mutsumi Sugiyama; Shigefusa F. Chichibu; Hironori Komaki; Tetsuo Ikari

doi:10.1016/S0921-4526(01)00453-7

Optical and electrical properties of AgIn(SSe)₂ crystals

Kenji Yoshino, Naoji Mitani, Mutsumi Sugiyama, Shigefusa F. Chichibu, Hironori Komaki, Tetsuo Ikari

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

AgIn(S_XSe_1-X)₂ (X = 0-1.0) crystals were grown by a vertical gradient freezing (VGF) method. All samples indicated chalcopyrite structures and n-types by means of X-ray diffraction (XRD) and thermoprobe analysis, respectively. All crystals were slightly found to be Se- and S-rich by the electron probe microanalysis (EPMA). The samples were also In-poor in X < 0.5 and Ag-poor in X > 0.5. The AgIn(S_0.5Se_0.5)₂ (X = 0.5) crystal was mostly close to the stoichiometry. Lattice constants of a and c axes calculated by the XRD patterns were found to be proportional to X, indicating that they obeyed Vegard's law. In the photoluminescence (PL) spectra at 77K, the crystals were highly pure because a free exciton (FE) emission line was clearly observed. It was clear that the FE peak energy showed a nonlinear dependence on the composition X values in the AgIn(S_XSe_1-X)₂ crystal. The bowing parameter was estimated to be 0.25 eV. After the AgInSe₂ crystal was annealed at 640°C under a vacuum atmosphere in the AgInSe₂ crystals, the optical quality was improved because the FE peak clearly appeared and the donor-acceptor pair emission band disappeared in the PL spectra.

Original language	English
Pages (from-to)	349-356
Number of pages	8
Journal	Physica B: Condensed Matter
Volume	302-303
DOIs	https://doi.org/10.1016/S0921-4526(01)00453-7
Publication status	Published - 2001 Jun 30
Externally published	Yes
Event	Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan Duration: 2000 Sept 24 → 2000 Sept 27

Keywords

AgIn(SSe)
Chalcopyrite
Hall measurement
Photoluminescence

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(01)00453-7

Cite this

@article{0f1aeac587084c559881b69505d3a9c9,

title = "Optical and electrical properties of AgIn(SSe)2 crystals",

abstract = "AgIn(SXSe1-X)2 (X = 0-1.0) crystals were grown by a vertical gradient freezing (VGF) method. All samples indicated chalcopyrite structures and n-types by means of X-ray diffraction (XRD) and thermoprobe analysis, respectively. All crystals were slightly found to be Se- and S-rich by the electron probe microanalysis (EPMA). The samples were also In-poor in X < 0.5 and Ag-poor in X > 0.5. The AgIn(S0.5Se0.5)2 (X = 0.5) crystal was mostly close to the stoichiometry. Lattice constants of a and c axes calculated by the XRD patterns were found to be proportional to X, indicating that they obeyed Vegard's law. In the photoluminescence (PL) spectra at 77K, the crystals were highly pure because a free exciton (FE) emission line was clearly observed. It was clear that the FE peak energy showed a nonlinear dependence on the composition X values in the AgIn(SXSe1-X)2 crystal. The bowing parameter was estimated to be 0.25 eV. After the AgInSe2 crystal was annealed at 640°C under a vacuum atmosphere in the AgInSe2 crystals, the optical quality was improved because the FE peak clearly appeared and the donor-acceptor pair emission band disappeared in the PL spectra.",

keywords = "AgIn(SSe), Chalcopyrite, Hall measurement, Photoluminescence",

author = "Kenji Yoshino and Naoji Mitani and Mutsumi Sugiyama and Chichibu, {Shigefusa F.} and Hironori Komaki and Tetsuo Ikari",

year = "2001",

month = jun,

day = "30",

doi = "10.1016/S0921-4526(01)00453-7",

language = "English",

volume = "302-303",

pages = "349--356",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors ; Conference date: 24-09-2000 Through 27-09-2000",

}

TY - JOUR

T1 - Optical and electrical properties of AgIn(SSe)2 crystals

AU - Yoshino, Kenji

AU - Mitani, Naoji

AU - Sugiyama, Mutsumi

AU - Chichibu, Shigefusa F.

AU - Komaki, Hironori

AU - Ikari, Tetsuo

PY - 2001/6/30

Y1 - 2001/6/30

N2 - AgIn(SXSe1-X)2 (X = 0-1.0) crystals were grown by a vertical gradient freezing (VGF) method. All samples indicated chalcopyrite structures and n-types by means of X-ray diffraction (XRD) and thermoprobe analysis, respectively. All crystals were slightly found to be Se- and S-rich by the electron probe microanalysis (EPMA). The samples were also In-poor in X < 0.5 and Ag-poor in X > 0.5. The AgIn(S0.5Se0.5)2 (X = 0.5) crystal was mostly close to the stoichiometry. Lattice constants of a and c axes calculated by the XRD patterns were found to be proportional to X, indicating that they obeyed Vegard's law. In the photoluminescence (PL) spectra at 77K, the crystals were highly pure because a free exciton (FE) emission line was clearly observed. It was clear that the FE peak energy showed a nonlinear dependence on the composition X values in the AgIn(SXSe1-X)2 crystal. The bowing parameter was estimated to be 0.25 eV. After the AgInSe2 crystal was annealed at 640°C under a vacuum atmosphere in the AgInSe2 crystals, the optical quality was improved because the FE peak clearly appeared and the donor-acceptor pair emission band disappeared in the PL spectra.

AB - AgIn(SXSe1-X)2 (X = 0-1.0) crystals were grown by a vertical gradient freezing (VGF) method. All samples indicated chalcopyrite structures and n-types by means of X-ray diffraction (XRD) and thermoprobe analysis, respectively. All crystals were slightly found to be Se- and S-rich by the electron probe microanalysis (EPMA). The samples were also In-poor in X < 0.5 and Ag-poor in X > 0.5. The AgIn(S0.5Se0.5)2 (X = 0.5) crystal was mostly close to the stoichiometry. Lattice constants of a and c axes calculated by the XRD patterns were found to be proportional to X, indicating that they obeyed Vegard's law. In the photoluminescence (PL) spectra at 77K, the crystals were highly pure because a free exciton (FE) emission line was clearly observed. It was clear that the FE peak energy showed a nonlinear dependence on the composition X values in the AgIn(SXSe1-X)2 crystal. The bowing parameter was estimated to be 0.25 eV. After the AgInSe2 crystal was annealed at 640°C under a vacuum atmosphere in the AgInSe2 crystals, the optical quality was improved because the FE peak clearly appeared and the donor-acceptor pair emission band disappeared in the PL spectra.

KW - AgIn(SSe)

KW - Chalcopyrite

KW - Hall measurement

KW - Photoluminescence

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DO - 10.1016/S0921-4526(01)00453-7

M3 - Conference article

AN - SCOPUS:0034971085

SN - 0921-4526

VL - 302-303

SP - 349

EP - 356

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors

Y2 - 24 September 2000 through 27 September 2000

ER -