Optical and electrical properties of Co-doped epitaxial ZnO films

Zheng Wu Jin, T. Fukumura, K. Hasegawa, Y. Z. Yoo, K. Ando, T. Sekiguchi, P. Ahmet, T. Chikyow, T. Hasegawa, H. Koinuma, M. Kawasaki

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)


Epitaxial ZnO films doped with Co were fabricated by the high throughput combinatorial laser molecular-beam epitaxy method. The solubility limit of Co in ZnO was determined. Transmission and cathodoluminescence spectra were measured to study the electronic structures of Co in Zn1-xCoxO films. Magnetoresistance behavior was measured for a selected sample co-doped with 1 mol% of Al to investigate s-d exchange interaction between the conducting s electron spins and the d electron spins localized at Co impurity. Huge magneto-optical effects comparable with that of Cd1-xMnxTe were observed on Zn1-xCoxO films.

Original languageEnglish
Pages (from-to)548-552
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2002 Apr


  • A3. Molecular beam epitaxy
  • B1. Zinc compounds
  • B2. Magneto-optic materials


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