Optical and structural studies in InGaN quantum well structure laser diodes

Shigefusa F. Chichibu; Takashi Azuhata; Mutsumi Sugiyama; Toshio Kitamura; Yuuki Ishida; Hajime Okumura; Hisayuki Nakanishi; Takayuki Sota; Takashi Mukai

doi:10.1116/1.1418404

Optical and structural studies in InGaN quantum well structure laser diodes

Shigefusa F. Chichibu, Takashi Azuhata, Mutsumi Sugiyama, Toshio Kitamura, Yuuki Ishida, Hajime Okumura, Hisayuki Nakanishi, Takayuki Sota, Takashi Mukai

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

An In_0.06Ga_0.94N multiple-quantum-well (MQW) laser diode (LD) structure was shown to have atomically flat interfaces and very small compositional inhomogeneity. However, excitons were confirmed to be localized at the exponential-tail type potential minima in the density of states. Spontaneous emission was assigned as being due to the recombination of localized excitons while the stimulated emission seemed to come from the continuum states energetically higher than the mobility edge.

Original language	English
Pages (from-to)	2177-2183
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	6
DOIs	https://doi.org/10.1116/1.1418404
Publication status	Published - 2001 Nov

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@article{acbbcdab33d54b22a96e2e626f3df37c,

title = "Optical and structural studies in InGaN quantum well structure laser diodes",

abstract = "An In0.06Ga0.94N multiple-quantum-well (MQW) laser diode (LD) structure was shown to have atomically flat interfaces and very small compositional inhomogeneity. However, excitons were confirmed to be localized at the exponential-tail type potential minima in the density of states. Spontaneous emission was assigned as being due to the recombination of localized excitons while the stimulated emission seemed to come from the continuum states energetically higher than the mobility edge.",

author = "Chichibu, {Shigefusa F.} and Takashi Azuhata and Mutsumi Sugiyama and Toshio Kitamura and Yuuki Ishida and Hajime Okumura and Hisayuki Nakanishi and Takayuki Sota and Takashi Mukai",

year = "2001",

month = nov,

doi = "10.1116/1.1418404",

language = "English",

volume = "19",

pages = "2177--2183",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Optical and structural studies in InGaN quantum well structure laser diodes

AU - Chichibu, Shigefusa F.

AU - Azuhata, Takashi

AU - Sugiyama, Mutsumi

AU - Kitamura, Toshio

AU - Ishida, Yuuki

AU - Okumura, Hajime

AU - Nakanishi, Hisayuki

AU - Sota, Takayuki

AU - Mukai, Takashi

PY - 2001/11

Y1 - 2001/11

N2 - An In0.06Ga0.94N multiple-quantum-well (MQW) laser diode (LD) structure was shown to have atomically flat interfaces and very small compositional inhomogeneity. However, excitons were confirmed to be localized at the exponential-tail type potential minima in the density of states. Spontaneous emission was assigned as being due to the recombination of localized excitons while the stimulated emission seemed to come from the continuum states energetically higher than the mobility edge.

AB - An In0.06Ga0.94N multiple-quantum-well (MQW) laser diode (LD) structure was shown to have atomically flat interfaces and very small compositional inhomogeneity. However, excitons were confirmed to be localized at the exponential-tail type potential minima in the density of states. Spontaneous emission was assigned as being due to the recombination of localized excitons while the stimulated emission seemed to come from the continuum states energetically higher than the mobility edge.

UR - http://www.scopus.com/inward/record.url?scp=0035519480&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035519480&partnerID=8YFLogxK

U2 - 10.1116/1.1418404

DO - 10.1116/1.1418404

M3 - Article

AN - SCOPUS:0035519480

SN - 1071-1023

VL - 19

SP - 2177

EP - 2183

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Optical and structural studies in InGaN quantum well structure laser diodes

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