Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(0 0 1)

Toshiharu Morimura; Takahiro Mori; Meoung Whan Cho; Takashi Hanada; Takafumi Yao

doi:10.1016/j.cap.2004.01.034

Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(0 0 1)

Toshiharu Morimura, Takahiro Mori, Meoung Whan Cho, Takashi Hanada, Takafumi Yao

Materials Design Division

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated surface morphology and optical anisotropy of strained InGaAs films grown on GaAs(0 0 1) substrate using atomic force microscopy (AFM) and reflectance difference/reflectance anisotropy spectroscopy (RDS/RAS). High temperature (HT)-grown samples were found to have a rippled surface structure, however for films grown using a low temperature (LT) growth technique, the surface morphology was significantly improved, without the ripple structure seen on the HT samples. Furthermore, ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulk electronic transitions.

Original language	English
Pages (from-to)	621-624
Number of pages	4
Journal	Current Applied Physics
Volume	4
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2004.01.034
Publication status	Published - 2004 Nov 1

Keywords

Atomic force microscopy (AFM)
InGaAs
Low temperature growth
Molecular beam epitaxy (MBE)
Reflectance anisotropy spectroscopy (RAS)
Reflectance difference spectroscopy (RDS)
Surface morphology

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

Access to Document

10.1016/j.cap.2004.01.034

Cite this

@article{920b20a53c3c4db7a4ccd724dbd17552,

title = "Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(0 0 1)",

abstract = "We investigated surface morphology and optical anisotropy of strained InGaAs films grown on GaAs(0 0 1) substrate using atomic force microscopy (AFM) and reflectance difference/reflectance anisotropy spectroscopy (RDS/RAS). High temperature (HT)-grown samples were found to have a rippled surface structure, however for films grown using a low temperature (LT) growth technique, the surface morphology was significantly improved, without the ripple structure seen on the HT samples. Furthermore, ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulk electronic transitions.",

keywords = "Atomic force microscopy (AFM), InGaAs, Low temperature growth, Molecular beam epitaxy (MBE), Reflectance anisotropy spectroscopy (RAS), Reflectance difference spectroscopy (RDS), Surface morphology",

author = "Toshiharu Morimura and Takahiro Mori and Cho, {Meoung Whan} and Takashi Hanada and Takafumi Yao",

year = "2004",

month = nov,

day = "1",

doi = "10.1016/j.cap.2004.01.034",

language = "English",

volume = "4",

pages = "621--624",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "6",

}

TY - JOUR

T1 - Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(0 0 1)

AU - Morimura, Toshiharu

AU - Mori, Takahiro

AU - Cho, Meoung Whan

AU - Hanada, Takashi

AU - Yao, Takafumi

PY - 2004/11/1

Y1 - 2004/11/1

N2 - We investigated surface morphology and optical anisotropy of strained InGaAs films grown on GaAs(0 0 1) substrate using atomic force microscopy (AFM) and reflectance difference/reflectance anisotropy spectroscopy (RDS/RAS). High temperature (HT)-grown samples were found to have a rippled surface structure, however for films grown using a low temperature (LT) growth technique, the surface morphology was significantly improved, without the ripple structure seen on the HT samples. Furthermore, ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulk electronic transitions.

AB - We investigated surface morphology and optical anisotropy of strained InGaAs films grown on GaAs(0 0 1) substrate using atomic force microscopy (AFM) and reflectance difference/reflectance anisotropy spectroscopy (RDS/RAS). High temperature (HT)-grown samples were found to have a rippled surface structure, however for films grown using a low temperature (LT) growth technique, the surface morphology was significantly improved, without the ripple structure seen on the HT samples. Furthermore, ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulk electronic transitions.

KW - Atomic force microscopy (AFM)

KW - InGaAs

KW - Low temperature growth

KW - Molecular beam epitaxy (MBE)

KW - Reflectance anisotropy spectroscopy (RAS)

KW - Reflectance difference spectroscopy (RDS)

KW - Surface morphology

UR - http://www.scopus.com/inward/record.url?scp=5144229293&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5144229293&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2004.01.034

DO - 10.1016/j.cap.2004.01.034

M3 - Article

AN - SCOPUS:5144229293

SN - 1567-1739

VL - 4

SP - 621

EP - 624

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(0 0 1)

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this