TY - JOUR
T1 - Optical anisotropy control of non-c-plane InGaN quantum wells
AU - Kojima, Kazunobu
AU - Kamon, Hiroaki
AU - Funato, Mitsuru
AU - Kawakami, Yoichi
PY - 2009
Y1 - 2009
N2 - A method to control the optical polarization of non-c-plane InGaN quantum wells (QWs) is proposed. Firstly, it is described the numerical and analytical solutions of the valence band eigenenergies and eigenfunctions for non-c-plane nitride semiconductors. It is found that anisotropic strain dominates optical anisotropy due to the small spin-orbit interaction and the large lattice mismatch. Subsequently, it is introduced the InGaN/AlGaN QW structure instead of the InGaN/GaN QW in order to manipulate the eigenenergies of the two topmost valence bands. This resulted in optical polarization switching. We conclude with a discussion of relevant computational results.
AB - A method to control the optical polarization of non-c-plane InGaN quantum wells (QWs) is proposed. Firstly, it is described the numerical and analytical solutions of the valence band eigenenergies and eigenfunctions for non-c-plane nitride semiconductors. It is found that anisotropic strain dominates optical anisotropy due to the small spin-orbit interaction and the large lattice mismatch. Subsequently, it is introduced the InGaN/AlGaN QW structure instead of the InGaN/GaN QW in order to manipulate the eigenenergies of the two topmost valence bands. This resulted in optical polarization switching. We conclude with a discussion of relevant computational results.
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U2 - 10.1143/JJAP.48.080201
DO - 10.1143/JJAP.48.080201
M3 - Article
AN - SCOPUS:77952683205
SN - 0021-4922
VL - 48
SP - 802011
EP - 802013
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 8 Part 1
ER -