Optical anisotropy of GaNAs grown on GaAs(0 0 1) substrate

Takahiro Mori, Takashi Hanada, Toshiharu Morimura, Meoung Whan Cho, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this paper GaNxAs1-x surfaces during growth are observed using reflectance difference or reflectance anisotropy spectroscopy (RDS or RAS). The epi-layer was grown by solid-source molecular beam epitaxy (MBE) system with a RF nitrogen prasma source. RD spectra showed broader structure and reduced amplitude compared to those of GaAs surfaces; GaAs(2 × 4)-like features were still observed with weak and blue-shifted peaks. In the low growth temperature region, an extra structure was also observed around 3.02 eV. We proposed that GaNxAs1-xsurface can be classified into three types of the surface.

Original languageEnglish
Pages (from-to)640-642
Number of pages3
JournalCurrent Applied Physics
Issue number6
Publication statusPublished - 2004 Nov


  • GaNAs
  • Molecular beam epitaxy (MBE)
  • Reflectance anisotropy spectroscopy (RAS)
  • Reflectance difference spectroscopy (RDS)
  • Surface


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