Optical characterization of bulk GaN grown from a Na/Ga flux

K. Palle, L. Chen, H. X. Liu, B. J. Skromme, H. Yamane, M. Aoki, C. B. Hoffman, F. J. DiSalvo

Research output: Contribution to journalConference articlepeer-review


Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.

Original languageEnglish
Pages (from-to)201-206
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: 2002 Dec 22002 Dec 6


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