Bulk GaN crystals up to several mm in size, grown by a Na/Ga flux method, have been characterized using room and low temperature photoluminescence (PL) and panchromatic cathodoluminescence (CL) imaging. Highly resolved excitonic PL spectra are obtained for material grown in a new, large-scale reactor. The crystal polarity affects the incorporation of residual Zn and Mg or Si acceptors and the deep level luminescence bands in c-oriented platelets. A Zn (A°,X) triplet structure with unusual thermalization properties and a highly resolved structural defect related PL peak are observed. Striations are found in some of the smaller platelets by CL imaging, but are absent in the prismatic crystals.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 2002|
|Event||Gan and Related Alloys - 2002 - Boston, MA, United States|
Duration: 2002 Dec 2 → 2002 Dec 6