Optical charaterization of Ag/Ga composition ratio in AgGaSe2 thin film

Hitoshi Matsuo; Takahiro Tokuda; Kenji Yoshino; Aya Kinoshita; Tetsuo Ikari; Koichi Kakimoto; Satoru Seto

doi:10.1002/pssc.200881138

Optical charaterization of Ag/Ga composition ratio in AgGaSe₂ thin film

Hitoshi Matsuo, Takahiro Tokuda, Kenji Yoshino, Aya Kinoshita, Tetsuo Ikari, Koichi Kakimoto, Satoru Seto

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

AgGaSe₂ thin films, changing the Ag/Ga ratio from 0.4 to 1.5, on glass substrates were successfully grown by vacuum evaporation method. Fundamental absorption bandedges were clearly observed except for Ag/Ga ratios of 0.4 and 1.5 in the optical transmittance spectra at RT. The optical bandgap in-creased with increasing Ag/Ga ratio. This was due to the Bernstein-Moss shifts. Photoluminescence spectrum was strongly observed in the stoichiometric sample in comparison to Ag- and Ga-rich samples. This means that nonradiative re-combination transition was a few in the stoichiometric sample because there were few defects in the samples Two distinct peaks at 1.77 and 1.70 eV were clearly observed in the stoichiometric sample. They were due to bound exciton emis-sion and donor-acceptor pair (DAP) emission, respectively. The DAP emission is due to recombination between Se- and Ga vacancies.

Original language	English
Pages (from-to)	1070-1073
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	5
DOIs	https://doi.org/10.1002/pssc.200881138
Publication status	Published - 2009
Externally published	Yes
Event	16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany Duration: 2008 Sept 15 → 2008 Sept 19

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200881138

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title = "Optical charaterization of Ag/Ga composition ratio in AgGaSe2 thin film",

abstract = "AgGaSe2 thin films, changing the Ag/Ga ratio from 0.4 to 1.5, on glass substrates were successfully grown by vacuum evaporation method. Fundamental absorption bandedges were clearly observed except for Ag/Ga ratios of 0.4 and 1.5 in the optical transmittance spectra at RT. The optical bandgap in-creased with increasing Ag/Ga ratio. This was due to the Bernstein-Moss shifts. Photoluminescence spectrum was strongly observed in the stoichiometric sample in comparison to Ag- and Ga-rich samples. This means that nonradiative re-combination transition was a few in the stoichiometric sample because there were few defects in the samples Two distinct peaks at 1.77 and 1.70 eV were clearly observed in the stoichiometric sample. They were due to bound exciton emis-sion and donor-acceptor pair (DAP) emission, respectively. The DAP emission is due to recombination between Se- and Ga vacancies.",

author = "Hitoshi Matsuo and Takahiro Tokuda and Kenji Yoshino and Aya Kinoshita and Tetsuo Ikari and Koichi Kakimoto and Satoru Seto",

year = "2009",

doi = "10.1002/pssc.200881138",

language = "English",

volume = "6",

pages = "1070--1073",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "5",

note = "16th International Conference on Ternary and Multinary Compounds, ICTMC16 ; Conference date: 15-09-2008 Through 19-09-2008",

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TY - JOUR

T1 - Optical charaterization of Ag/Ga composition ratio in AgGaSe2 thin film

AU - Matsuo, Hitoshi

AU - Tokuda, Takahiro

AU - Yoshino, Kenji

AU - Kinoshita, Aya

AU - Ikari, Tetsuo

AU - Kakimoto, Koichi

AU - Seto, Satoru

PY - 2009

Y1 - 2009

N2 - AgGaSe2 thin films, changing the Ag/Ga ratio from 0.4 to 1.5, on glass substrates were successfully grown by vacuum evaporation method. Fundamental absorption bandedges were clearly observed except for Ag/Ga ratios of 0.4 and 1.5 in the optical transmittance spectra at RT. The optical bandgap in-creased with increasing Ag/Ga ratio. This was due to the Bernstein-Moss shifts. Photoluminescence spectrum was strongly observed in the stoichiometric sample in comparison to Ag- and Ga-rich samples. This means that nonradiative re-combination transition was a few in the stoichiometric sample because there were few defects in the samples Two distinct peaks at 1.77 and 1.70 eV were clearly observed in the stoichiometric sample. They were due to bound exciton emis-sion and donor-acceptor pair (DAP) emission, respectively. The DAP emission is due to recombination between Se- and Ga vacancies.

AB - AgGaSe2 thin films, changing the Ag/Ga ratio from 0.4 to 1.5, on glass substrates were successfully grown by vacuum evaporation method. Fundamental absorption bandedges were clearly observed except for Ag/Ga ratios of 0.4 and 1.5 in the optical transmittance spectra at RT. The optical bandgap in-creased with increasing Ag/Ga ratio. This was due to the Bernstein-Moss shifts. Photoluminescence spectrum was strongly observed in the stoichiometric sample in comparison to Ag- and Ga-rich samples. This means that nonradiative re-combination transition was a few in the stoichiometric sample because there were few defects in the samples Two distinct peaks at 1.77 and 1.70 eV were clearly observed in the stoichiometric sample. They were due to bound exciton emis-sion and donor-acceptor pair (DAP) emission, respectively. The DAP emission is due to recombination between Se- and Ga vacancies.

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DO - 10.1002/pssc.200881138

M3 - Conference article

AN - SCOPUS:70349418168

SN - 1862-6351

VL - 6

SP - 1070

EP - 1073

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 5

T2 - 16th International Conference on Ternary and Multinary Compounds, ICTMC16

Y2 - 15 September 2008 through 19 September 2008

ER -

Optical charaterization of Ag/Ga composition ratio in AgGaSe₂ thin film

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