Fast crystallization and low power amorphization are essential to achieve rapid data recording and low power consumption in phase-change memory. This work investigated the laser-induced phase transition behaviors of GeCu 2Te3 film based on the reflectance of amorphous and crystalline states. The GeCu2Te3 film showed a reflectance decrease upon crystallization, which was the opposite behavior in Ge 2Sb2Te5 film. The crystallization starting time of the as-deposited GeCu2Te3 film was as fast as that of the as-deposited Ge2Sb2Te5 film. Furthermore, the GeCu2Te3 crystalline film was found to be reamorphized by laser irradiation at lower power and shorter pulse width than the Ge 2Sb2Te5.