We investigated the effective magnetic field induced by spinorbit interaction in a gated modulation-doped GaAs/AlGaAs quantum well (QW) structure. We measured the precession of the optically injected electron spins at zero magnetic field by a time-resolved Kerr rotation (TRKR) technique as a function of the gate voltage Vg. The Vg-dependence of the effective magnetic field extracted from the TRKR data was quantitatively analyzed by considering both Rashba and Dresselhaus spinorbit interaction in a Monte Carlo simulation. With the Dresselhaus spinorbit coupling parameter γ and the scattering time as fitting parameters, we reproduced the experimental TRKR data, from which we estimated γ∼13 eV 3.
|Number of pages||4|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 2010 Sept|
- Spinorbit interaction
- Time-resolved Kerr rotation