Abstract
We developed a method for in-situ monitoring of silicon diaphragm thickness during wet chemical etching. The principle of the thickness measurement is multiple-beam interference spectroscopy. This interference is caused by the multiple-reflection at both surfaces of the silicon diaphragm. The interference spectrum was observed in the near infrared region of the spectrum, from 800 nm to 1000 nm, with a spectrometer and a photomultiplier. This range is determined by absorption spectra of silicon and etchant, and by the spectral sensitivity of the photomultiplier. Two monitoring systems, that is, transmission system and reflection system were developed. The reflection system proved to be better as it is not affected by bubble generation. Using this system, the diaphragm thickness from 2 μm to 20 μm could be monitored. The thickness nonuniformity reduces the contrast of interference spectrum. In order to solve this problem, the measurement part illuminated by the focused light has to be reduced, and the sensitivity of the photodetector also has to be high.
| Original language | English |
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| Title of host publication | An Investigations of Micro Structures, Sensors, Actuators, Machines and Robotic Systems |
| Publisher | Publ by IEEE |
| Pages | 217-222 |
| Number of pages | 6 |
| ISBN (Print) | 078031834X |
| Publication status | Published - 1994 Jan 1 |
| Event | Proceedings of the IEEE Micro Electro Mechanical Systems - Oiso, Jpn Duration: 1994 Jan 25 → 1994 Jan 28 |
Other
| Other | Proceedings of the IEEE Micro Electro Mechanical Systems |
|---|---|
| City | Oiso, Jpn |
| Period | 94/1/25 → 94/1/28 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Mechanical Engineering
- Electrical and Electronic Engineering