TY - GEN
T1 - Optical interconnect technologies for high-speed VLSI chips using silicon nano-photonics
AU - Ohashi, Keishi
AU - Fujikata, Junichi
AU - Nakada, Masafumi
AU - Ishi, Tsutomu
AU - Nishi, Kenichi
AU - Yamada, Hirohito
AU - Fukaishi, Muneo
AU - Mizuno, Masayuki
AU - Nose, Koichi
AU - Ogura, Ichiro
AU - Urino, Yutaka
AU - Baba, Toshio
PY - 2006
Y1 - 2006
N2 - Optoelectronic and electrooptic elements are integrated on VLSI chips. The junction capacitance of a nano-photodiode is extremely low (<10aF), which permits a high load resistance to be used, resulting in higher output voltage at high frequencies. A ceramic Pb(,ZrTi)O3 film with average crystallite diameter below 20nm has a high electro-optical coefficient (>150pm/V) suitable for on-chip modulators.
AB - Optoelectronic and electrooptic elements are integrated on VLSI chips. The junction capacitance of a nano-photodiode is extremely low (<10aF), which permits a high load resistance to be used, resulting in higher output voltage at high frequencies. A ceramic Pb(,ZrTi)O3 film with average crystallite diameter below 20nm has a high electro-optical coefficient (>150pm/V) suitable for on-chip modulators.
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UR - http://www.scopus.com/inward/citedby.url?scp=39749119449&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:39749119449
SN - 1424400791
SN - 9781424400799
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 426+417
BT - 2006 IEEE International Solid-State Circuits Conference, ISSCC - Digest of Technical Papers
T2 - 2006 IEEE International Solid-State Circuits Conference, ISSCC
Y2 - 6 February 2006 through 9 February 2006
ER -