TY - JOUR
T1 - Optical properties of (formula presented) under pressure
AU - Takarabe, K.
AU - Teranishi, R.
AU - Oinuma, J.
AU - Mori, Y.
AU - Suemasu, T.
AU - Chichibu, S.
AU - Hasegawa, F.
PY - 2002
Y1 - 2002
N2 - We have investigated the high-pressure optical absorption of Iron disilicide, (formula presented) thin films(90 nm in thickness) prepared from Si/Fe multilayers on Si (001) with template and (formula presented) capping. It is found that the experimental absorption coefficient in the range of photon energy of about 0.3 eV beyond the band gap is a few orders of magnitude larger than the first-principles calculated absorption coefficient. A possible explanation for this large absorption coefficient is the saddle-point exciton effect by the calculated band structure. No critical points with negative hydrostatic pressure coefficients such as those of Si and GaAs are observed in (formula presented) near the band gap. The pressure coefficient for the direct band gap of (formula presented) is determined to be 15.9 meV/GPa. This small coefficient is due to the negative deformation potential of the valence-band maximum, and the large bulk modulus of (formula presented).
AB - We have investigated the high-pressure optical absorption of Iron disilicide, (formula presented) thin films(90 nm in thickness) prepared from Si/Fe multilayers on Si (001) with template and (formula presented) capping. It is found that the experimental absorption coefficient in the range of photon energy of about 0.3 eV beyond the band gap is a few orders of magnitude larger than the first-principles calculated absorption coefficient. A possible explanation for this large absorption coefficient is the saddle-point exciton effect by the calculated band structure. No critical points with negative hydrostatic pressure coefficients such as those of Si and GaAs are observed in (formula presented) near the band gap. The pressure coefficient for the direct band gap of (formula presented) is determined to be 15.9 meV/GPa. This small coefficient is due to the negative deformation potential of the valence-band maximum, and the large bulk modulus of (formula presented).
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U2 - 10.1103/PhysRevB.65.165215
DO - 10.1103/PhysRevB.65.165215
M3 - Article
AN - SCOPUS:85038267608
SN - 1098-0121
VL - 65
SP - 1
EP - 5
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 16
ER -