TY - JOUR

T1 - Optical properties of (formula presented) under pressure

AU - Takarabe, K.

AU - Teranishi, R.

AU - Oinuma, J.

AU - Mori, Y.

AU - Suemasu, T.

AU - Chichibu, S.

AU - Hasegawa, F.

PY - 2002

Y1 - 2002

N2 - We have investigated the high-pressure optical absorption of Iron disilicide, (formula presented) thin films(90 nm in thickness) prepared from Si/Fe multilayers on Si (001) with template and (formula presented) capping. It is found that the experimental absorption coefficient in the range of photon energy of about 0.3 eV beyond the band gap is a few orders of magnitude larger than the first-principles calculated absorption coefficient. A possible explanation for this large absorption coefficient is the saddle-point exciton effect by the calculated band structure. No critical points with negative hydrostatic pressure coefficients such as those of Si and GaAs are observed in (formula presented) near the band gap. The pressure coefficient for the direct band gap of (formula presented) is determined to be 15.9 meV/GPa. This small coefficient is due to the negative deformation potential of the valence-band maximum, and the large bulk modulus of (formula presented).

AB - We have investigated the high-pressure optical absorption of Iron disilicide, (formula presented) thin films(90 nm in thickness) prepared from Si/Fe multilayers on Si (001) with template and (formula presented) capping. It is found that the experimental absorption coefficient in the range of photon energy of about 0.3 eV beyond the band gap is a few orders of magnitude larger than the first-principles calculated absorption coefficient. A possible explanation for this large absorption coefficient is the saddle-point exciton effect by the calculated band structure. No critical points with negative hydrostatic pressure coefficients such as those of Si and GaAs are observed in (formula presented) near the band gap. The pressure coefficient for the direct band gap of (formula presented) is determined to be 15.9 meV/GPa. This small coefficient is due to the negative deformation potential of the valence-band maximum, and the large bulk modulus of (formula presented).

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U2 - 10.1103/PhysRevB.65.165215

DO - 10.1103/PhysRevB.65.165215

M3 - Article

AN - SCOPUS:85038267608

SN - 1098-0121

VL - 65

SP - 1

EP - 5

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

ER -