Optical properties of InGaN/GaN quantum wells with Si doped barriers

Milan S. Minsky; Shigefusa Chichibu; Siegfried B. Fleischer; Amber C. Abare; John E. Bowers; Evelyn Hu; Stacia Keller; Umesh K. Mishra; Steven P. Denbaars

doi:10.1143/jjap.37.l1362

Optical properties of InGaN/GaN quantum wells with Si doped barriers

Milan S. Minsky, Shigefusa Chichibu, Siegfried B. Fleischer, Amber C. Abare, John E. Bowers, Evelyn Hu, Stacia Keller, Umesh K. Mishra, Steven P. Denbaars

IMRAM - Division of Measurements

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and photoluminescence excitation (PLE) spectroscopy. The room temperature carrier lifetime depends strongly on the Si doping level in the quantum well barriers, decreasing from 10ns to 1 ns as the doping level is increased from unintentionally doped to 5 × 10¹⁸ cm^-3 (Si:GaN). The shift between the absorption edge and emission peak decreases from 220 meV to 110meV as the doping is increased. Temperature dependent photoluminescence measurements indicate a higher density of non-radiative centers in the undoped structures.

Original language	English
Pages (from-to)	L1362-L1364
Journal	Japanese Journal of Applied Physics
Volume	37
Issue number	11 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.l1362
Publication status	Published - 1998 Nov 15

Keywords

Doping
GaN
InGaN
Multi-quantum wells
Photoluminescence
Si

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@article{cfe524eaed924a40b338e88f64960a1f,

title = "Optical properties of InGaN/GaN quantum wells with Si doped barriers",

abstract = "Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and photoluminescence excitation (PLE) spectroscopy. The room temperature carrier lifetime depends strongly on the Si doping level in the quantum well barriers, decreasing from 10ns to 1 ns as the doping level is increased from unintentionally doped to 5 × 1018 cm-3 (Si:GaN). The shift between the absorption edge and emission peak decreases from 220 meV to 110meV as the doping is increased. Temperature dependent photoluminescence measurements indicate a higher density of non-radiative centers in the undoped structures.",

keywords = "Doping, GaN, InGaN, Multi-quantum wells, Photoluminescence, Si",

author = "Minsky, {Milan S.} and Shigefusa Chichibu and Fleischer, {Siegfried B.} and Abare, {Amber C.} and Bowers, {John E.} and Evelyn Hu and Stacia Keller and Mishra, {Umesh K.} and Denbaars, {Steven P.}",

year = "1998",

month = nov,

day = "15",

doi = "10.1143/jjap.37.l1362",

language = "English",

volume = "37",

pages = "L1362--L1364",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11 SUPPL. B",

}

TY - JOUR

T1 - Optical properties of InGaN/GaN quantum wells with Si doped barriers

AU - Minsky, Milan S.

AU - Chichibu, Shigefusa

AU - Fleischer, Siegfried B.

AU - Abare, Amber C.

AU - Bowers, John E.

AU - Hu, Evelyn

AU - Keller, Stacia

AU - Mishra, Umesh K.

AU - Denbaars, Steven P.

PY - 1998/11/15

Y1 - 1998/11/15

N2 - Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and photoluminescence excitation (PLE) spectroscopy. The room temperature carrier lifetime depends strongly on the Si doping level in the quantum well barriers, decreasing from 10ns to 1 ns as the doping level is increased from unintentionally doped to 5 × 1018 cm-3 (Si:GaN). The shift between the absorption edge and emission peak decreases from 220 meV to 110meV as the doping is increased. Temperature dependent photoluminescence measurements indicate a higher density of non-radiative centers in the undoped structures.

AB - Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and photoluminescence excitation (PLE) spectroscopy. The room temperature carrier lifetime depends strongly on the Si doping level in the quantum well barriers, decreasing from 10ns to 1 ns as the doping level is increased from unintentionally doped to 5 × 1018 cm-3 (Si:GaN). The shift between the absorption edge and emission peak decreases from 220 meV to 110meV as the doping is increased. Temperature dependent photoluminescence measurements indicate a higher density of non-radiative centers in the undoped structures.

KW - Doping

KW - GaN

KW - InGaN

KW - Multi-quantum wells

KW - Photoluminescence

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=0032205107&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032205107&partnerID=8YFLogxK

U2 - 10.1143/jjap.37.l1362

DO - 10.1143/jjap.37.l1362

M3 - Article

AN - SCOPUS:0032205107

SN - 0021-4922

VL - 37

SP - L1362-L1364

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11 SUPPL. B

ER -

Optical properties of InGaN/GaN quantum wells with Si doped barriers

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Keywords

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