Optical properties of tensile-strained wurtzite GaN epitaxial layers

S. Chichibu, T. Azuhata, T. Sota, H. Amano, I. Akasaki

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61 Citations (Scopus)


Photo-modulated electroreflectance and photoluminescence spectra of wurtzite GaN epilayers grown on a 6H-SiC (0001)Si or a Si (111) substrate were measured as a function of temperature. The valence band structure of a biaxially tensile-strained (-0.15% in c axis) epilayer was drastically changed compared to that in unstrained and compressively strained ones; the optical transition between the conduction and the uppermost valence band exhibiting the minimum transition energy was polarized parallel to the c axis, which is characteristic of the spin split-off valence band in unstrained crystal.

Original languageEnglish
Pages (from-to)2085-2087
Number of pages3
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 1997 Apr 21


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