TY - JOUR
T1 - Optimization of signal intensity in intermittent contact scanning nonlinear dielectric microscopy
AU - Yamasue, K.
AU - Cho, Y.
N1 - Funding Information:
We would like to thank Mr. Toshihiko Iwai, Tohoku University, for supporting the development of high-sensitivity probes. We are grateful to Ms. Tamiko Ambo, Tohoku University, for assistance with the experiment. This work is supported in part by a Grant-in-Aid for Scientific Research ( 16H06360 ) from the Japan Society for the Promotion of Science .
Funding Information:
We would like to thank Mr. Toshihiko Iwai, Tohoku University, for supporting the development of high-sensitivity probes. We are grateful to Ms. Tamiko Ambo, Tohoku University, for assistance with the experiment. This work is supported in part by a Grant-in-Aid for Scientific Research (16H06360) from the Japan Society for the Promotion of Science.
Publisher Copyright:
© 2019 Elsevier Ltd
PY - 2019/9
Y1 - 2019/9
N2 - Scanning nonlinear dielectric microscopy (SNDM) is a useful method for the nano-scale carrier distribution imaging of semiconductor materials and devices. This method is normally combined with contact mode atomic force microscopy (AFM) but the combination of SNDM with intermittent contact mode AFM is preferable to avoid the damages of tips and samples. However, signal-to-noise (S/N) ratio may significantly reduce due to a shorter contact time in the intermittent contact mode. Here we discuss the S/N ratio of the intermittent contact mode and show that the existence of the optimal condition on contact time and measurement bandwidth to maximize S/N ratio. We also experimentally demonstrate that signal intensity is actually improved by controlling contact time in the carrier distribution imaging on a Si test sample and atomically-thin layered semiconductors.
AB - Scanning nonlinear dielectric microscopy (SNDM) is a useful method for the nano-scale carrier distribution imaging of semiconductor materials and devices. This method is normally combined with contact mode atomic force microscopy (AFM) but the combination of SNDM with intermittent contact mode AFM is preferable to avoid the damages of tips and samples. However, signal-to-noise (S/N) ratio may significantly reduce due to a shorter contact time in the intermittent contact mode. Here we discuss the S/N ratio of the intermittent contact mode and show that the existence of the optimal condition on contact time and measurement bandwidth to maximize S/N ratio. We also experimentally demonstrate that signal intensity is actually improved by controlling contact time in the carrier distribution imaging on a Si test sample and atomically-thin layered semiconductors.
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U2 - 10.1016/j.microrel.2019.06.037
DO - 10.1016/j.microrel.2019.06.037
M3 - Article
AN - SCOPUS:85074684020
SN - 0026-2714
VL - 100-101
JO - Microelectronics Reliability
JF - Microelectronics Reliability
M1 - 113345
ER -