Organic field-effect transistor using oligoselenophene as an active layer

Yoshihito Kunugi; Kazuo Takimiya; Kiwamu Yamane; Kazuo Yamashita; Yoshio Aso; Tetsuo Otsubo

doi:10.1021/cm020949f

Organic field-effect transistor using oligoselenophene as an active layer

Yoshihito Kunugi, Kazuo Takimiya, Kiwamu Yamane, Kazuo Yamashita, Yoshio Aso, Tetsuo Otsubo

SCI - Chemistry

Hiroshima University

Research output: Contribution to journal › Article › peer-review

91 Citations (Scopus)

Abstract

The organic field-effect transistor using the oligoselenophene as an active layer has been first successfully fabricated. 2,2′:5′,2″:5″,2‴-Quaterselenophene (4S) showed p-channel characteristics and the best mobility of 3.6 × 10^-3 cm^-2 V^-1 s^-1 was obtained for the film prepared at a substrate temperature of 60 °C, which is the same with that of the vapor deposited quaterthiophene film.

Original language	English
Pages (from-to)	6-7
Number of pages	2
Journal	Chemistry of Materials
Volume	15
Issue number	1
DOIs	https://doi.org/10.1021/cm020949f
Publication status	Published - 2003 Jan 14

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AU - Kunugi, Yoshihito

AU - Takimiya, Kazuo

AU - Yamane, Kiwamu

AU - Yamashita, Kazuo

AU - Aso, Yoshio

AU - Otsubo, Tetsuo

PY - 2003/1/14

Y1 - 2003/1/14

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AB - The organic field-effect transistor using the oligoselenophene as an active layer has been first successfully fabricated. 2,2′:5′,2″:5″,2‴-Quaterselenophene (4S) showed p-channel characteristics and the best mobility of 3.6 × 10-3 cm-2 V-1 s-1 was obtained for the film prepared at a substrate temperature of 60 °C, which is the same with that of the vapor deposited quaterthiophene film.

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Organic field-effect transistor using oligoselenophene as an active layer

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