Organic magnetoresistance in ambipolar field-effect transistors

Song Toan Pham, Yoshitaka Kawasugi, Hirokazu Tada

    Research output: Contribution to journalArticlepeer-review

    17 Citations (Scopus)


    Magnetoresistance (MR) in ambipolar field-effect transistors (FETs) consisting of bilayers of pentacene (C22H14, PEN) and perfluoropentacene (C22F14, PFP) was studied. The ambipolar FET exhibits positive MR of approximately 1 at 100 mT and room temperature. This effect is considered to originate from the accumulated carriers at the interface between PEN and PFP. The gate voltage dependence showed that MR was enhanced with increasing number of electrons and holes accumulated at the PFP-PEN interface. The observed results support the proposed double-carrier models as the mechanism of organic magnetoresistance.

    Original languageEnglish
    Article number143301
    JournalApplied Physics Letters
    Issue number14
    Publication statusPublished - 2013 Sept 30

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)


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