Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu; Akira Uedono; Takeyoshi Onuma; Benjamin A. Haskell; Arpan Chakraborty; Takahiro Koyama; Paul T. Fini; Stacia Keller; Steven P. Denbaars; James S. Speck; Umesh K. Mishra; Shuji Nakamura; Shigeo Yamaguchi; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki; Jung Han; Takayuki Sota

doi:10.1038/nmat1726

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, Benjamin A. Haskell, Arpan Chakraborty, Takahiro Koyama, Paul T. Fini, Stacia Keller, Steven P. Denbaars, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Shigeo Yamaguchi, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Jung Han, Takayuki Sota

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

637 Citations (Scopus)

Abstract

GaN and relate (Al, In, Ga)N alloys can produce blue- and green-light-emitting-diodes (LEDs) for full color displays and signals although they contain a high density of structural defects such as threading dislocations (TDs) and stacking faults. Both Quantum Wells (QW) and three-dimensional (3D) bulk films of InGaN exhibit high emission efficiency due to the recombination of excitons localized at certain potential minima originating from InN-rich lower bandgap regions. Hole function localization was predicted to be centered around In atoms in dilute cubic InGaN, using large-scale atomistic empirical pseudopotential calculations. Defect-insensitive nature of NBE emission probability in bulk films of In-containing InGaN, AlInN and AlInGaN was explained. The use of atomically inhomogeneous crystals alloyed or doped with exotic atoms for future innovations in efficient light emitters even when using defective crystals was proposed was proposed.

Original language	English
Pages (from-to)	810-816
Number of pages	7
Journal	Nature Materials
Volume	5
Issue number	10
DOIs	https://doi.org/10.1038/nmat1726
Publication status	Published - 2006 Oct 5

Access to Document

10.1038/nmat1726

Cite this

Chichibu, S. F., Uedono, A., Onuma, T., Haskell, B. A., Chakraborty, A., Koyama, T., Fini, P. T., Keller, S., Denbaars, S. P., Speck, J. S., Mishra, U. K., Nakamura, S., Yamaguchi, S., Kamiyama, S., Amano, H., Akasaki, I., Han, J., & Sota, T. (2006). Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials, 5(10), 810-816. https://doi.org/10.1038/nmat1726

@article{be1c6335175844e2b4c9847a2144d87e,

title = "Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors",

abstract = "GaN and relate (Al, In, Ga)N alloys can produce blue- and green-light-emitting-diodes (LEDs) for full color displays and signals although they contain a high density of structural defects such as threading dislocations (TDs) and stacking faults. Both Quantum Wells (QW) and three-dimensional (3D) bulk films of InGaN exhibit high emission efficiency due to the recombination of excitons localized at certain potential minima originating from InN-rich lower bandgap regions. Hole function localization was predicted to be centered around In atoms in dilute cubic InGaN, using large-scale atomistic empirical pseudopotential calculations. Defect-insensitive nature of NBE emission probability in bulk films of In-containing InGaN, AlInN and AlInGaN was explained. The use of atomically inhomogeneous crystals alloyed or doped with exotic atoms for future innovations in efficient light emitters even when using defective crystals was proposed was proposed.",

author = "Chichibu, {Shigefusa F.} and Akira Uedono and Takeyoshi Onuma and Haskell, {Benjamin A.} and Arpan Chakraborty and Takahiro Koyama and Fini, {Paul T.} and Stacia Keller and Denbaars, {Steven P.} and Speck, {James S.} and Mishra, {Umesh K.} and Shuji Nakamura and Shigeo Yamaguchi and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki and Jung Han and Takayuki Sota",

note = "Funding Information: This work was supported in part by the 21st Century COE program {\textquoteleft}Promotion of Creative Interdisciplinary Materials Science for Novel Functions{\textquoteright} under MEXT, Japan. Correspondence and requests for materials should be addressed to S.F.C. Supplementary Information accompanies this paper on www.nature.com/naturematerials.",

year = "2006",

month = oct,

day = "5",

doi = "10.1038/nmat1726",

language = "English",

volume = "5",

pages = "810--816",

journal = "Nature Materials",

issn = "1476-1122",

publisher = "Nature Publishing Group",

number = "10",

}

Chichibu, SF, Uedono, A, Onuma, T, Haskell, BA, Chakraborty, A, Koyama, T, Fini, PT, Keller, S, Denbaars, SP, Speck, JS, Mishra, UK, Nakamura, S, Yamaguchi, S, Kamiyama, S, Amano, H, Akasaki, I, Han, J & Sota, T 2006, 'Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors', Nature Materials, vol. 5, no. 10, pp. 810-816. https://doi.org/10.1038/nmat1726

TY - JOUR

T1 - Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

AU - Chichibu, Shigefusa F.

AU - Uedono, Akira

AU - Onuma, Takeyoshi

AU - Haskell, Benjamin A.

AU - Chakraborty, Arpan

AU - Koyama, Takahiro

AU - Fini, Paul T.

AU - Keller, Stacia

AU - Denbaars, Steven P.

AU - Speck, James S.

AU - Mishra, Umesh K.

AU - Nakamura, Shuji

AU - Yamaguchi, Shigeo

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

AU - Han, Jung

AU - Sota, Takayuki

N1 - Funding Information: This work was supported in part by the 21st Century COE program ‘Promotion of Creative Interdisciplinary Materials Science for Novel Functions’ under MEXT, Japan. Correspondence and requests for materials should be addressed to S.F.C. Supplementary Information accompanies this paper on www.nature.com/naturematerials.

PY - 2006/10/5

Y1 - 2006/10/5

N2 - GaN and relate (Al, In, Ga)N alloys can produce blue- and green-light-emitting-diodes (LEDs) for full color displays and signals although they contain a high density of structural defects such as threading dislocations (TDs) and stacking faults. Both Quantum Wells (QW) and three-dimensional (3D) bulk films of InGaN exhibit high emission efficiency due to the recombination of excitons localized at certain potential minima originating from InN-rich lower bandgap regions. Hole function localization was predicted to be centered around In atoms in dilute cubic InGaN, using large-scale atomistic empirical pseudopotential calculations. Defect-insensitive nature of NBE emission probability in bulk films of In-containing InGaN, AlInN and AlInGaN was explained. The use of atomically inhomogeneous crystals alloyed or doped with exotic atoms for future innovations in efficient light emitters even when using defective crystals was proposed was proposed.

AB - GaN and relate (Al, In, Ga)N alloys can produce blue- and green-light-emitting-diodes (LEDs) for full color displays and signals although they contain a high density of structural defects such as threading dislocations (TDs) and stacking faults. Both Quantum Wells (QW) and three-dimensional (3D) bulk films of InGaN exhibit high emission efficiency due to the recombination of excitons localized at certain potential minima originating from InN-rich lower bandgap regions. Hole function localization was predicted to be centered around In atoms in dilute cubic InGaN, using large-scale atomistic empirical pseudopotential calculations. Defect-insensitive nature of NBE emission probability in bulk films of In-containing InGaN, AlInN and AlInGaN was explained. The use of atomically inhomogeneous crystals alloyed or doped with exotic atoms for future innovations in efficient light emitters even when using defective crystals was proposed was proposed.

UR - http://www.scopus.com/inward/record.url?scp=33750015835&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750015835&partnerID=8YFLogxK

U2 - 10.1038/nmat1726

DO - 10.1038/nmat1726

M3 - Article

AN - SCOPUS:33750015835

SN - 1476-1122

VL - 5

SP - 810

EP - 816

JO - Nature Materials

JF - Nature Materials

IS - 10

ER -

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this