Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

Noriyuki Miyata; Hiroyuki Ishii; Yuji Urabe; Taro Itatani; Tetsuji Yasuda; Hisashi Yamada; Noboru Fukuhara; Masahiko Hata; Momoko Deura; Masakazu Sugiyama; Mitsuru Takenaka; Shinichi Takagi

doi:10.1016/j.mee.2010.10.024

Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

Noriyuki Miyata, Hiroyuki Ishii, Yuji Urabe, Taro Itatani, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Momoko Deura, Masakazu Sugiyama, Mitsuru Takenaka, Shinichi Takagi

Materials Design Division

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Electrical and physical characteristics of the Al₂O ₃/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.

Original language	English
Pages (from-to)	3459-3461
Number of pages	3
Journal	Microelectronic Engineering
Volume	88
Issue number	12
DOIs	https://doi.org/10.1016/j.mee.2010.10.024
Publication status	Published - 2011 Dec

Keywords

Electron mobility
III-V semiconductor
InGaAs
Interface traps
MISFET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2010.10.024

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Miyata, N., Ishii, H., Urabe, Y., Itatani, T., Yasuda, T., Yamada, H., Fukuhara, N., Hata, M., Deura, M., Sugiyama, M., Takenaka, M., & Takagi, S. (2011). Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors. Microelectronic Engineering, 88(12), 3459-3461. https://doi.org/10.1016/j.mee.2010.10.024

Miyata, N, Ishii, H, Urabe, Y, Itatani, T, Yasuda, T, Yamada, H, Fukuhara, N, Hata, M, Deura, M, Sugiyama, M, Takenaka, M & Takagi, S 2011, 'Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors', Microelectronic Engineering, vol. 88, no. 12, pp. 3459-3461. https://doi.org/10.1016/j.mee.2010.10.024

@article{937071f6c5fd4df381465fc0a421754d,

title = "Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors",

abstract = "Electrical and physical characteristics of the Al2O 3/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.",

keywords = "Electron mobility, III-V semiconductor, InGaAs, Interface traps, MISFET",

author = "Noriyuki Miyata and Hiroyuki Ishii and Yuji Urabe and Taro Itatani and Tetsuji Yasuda and Hisashi Yamada and Noboru Fukuhara and Masahiko Hata and Momoko Deura and Masakazu Sugiyama and Mitsuru Takenaka and Shinichi Takagi",

note = "Funding Information: This work was carried out in the Nanoelectronics Project supported by NEDO. A part of this work was conducted at the AIST Nano-Processing Facility, supported by “Nanotechnology Network Japan” of the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT).",

year = "2011",

month = dec,

doi = "10.1016/j.mee.2010.10.024",

language = "English",

volume = "88",

pages = "3459--3461",

journal = "Microelectronic Engineering",

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T1 - Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

AU - Miyata, Noriyuki

AU - Ishii, Hiroyuki

AU - Urabe, Yuji

AU - Itatani, Taro

AU - Yasuda, Tetsuji

AU - Yamada, Hisashi

AU - Fukuhara, Noboru

AU - Hata, Masahiko

AU - Deura, Momoko

AU - Sugiyama, Masakazu

AU - Takenaka, Mitsuru

AU - Takagi, Shinichi

N1 - Funding Information: This work was carried out in the Nanoelectronics Project supported by NEDO. A part of this work was conducted at the AIST Nano-Processing Facility, supported by “Nanotechnology Network Japan” of the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT).

PY - 2011/12

Y1 - 2011/12

N2 - Electrical and physical characteristics of the Al2O 3/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.

AB - Electrical and physical characteristics of the Al2O 3/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.

KW - Electron mobility

KW - III-V semiconductor

KW - InGaAs

KW - Interface traps

KW - MISFET

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ER -

Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

Abstract

Keywords

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