Origin of SiC precipitation during the micro-pulling-down processing of Si-Ge fibers

Boris M. Epelbaum; Pavel A. Gurjiyants; Katsuhiko Inaba; Kiyoshi Shimamura; Satoshi Uda; Junichi Kon; Tsuguo Fukuda

doi:10.1143/jjap.36.2788

Origin of SiC precipitation during the micro-pulling-down processing of Si-Ge fibers

Boris M. Epelbaum, Pavel A. Gurjiyants, Katsuhiko Inaba, Kiyoshi Shimamura, Satoshi Uda, Junichi Kon, Tsuguo Fukuda

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The problem of SiC precipitation during micro-pulling-down growth of Si-Ge mixed crystals has been analyzed as an important constraint of the technique. Three mechanisms of SiC microcrystal formation have been discussed. The solute transport in the melt and the dependence of the rate of Si-Ge melt evaporation on melt composition have been investigated. The troublesome influence of CO on SiC formation has been reduced by modification of the micro-pulling-down (μ-PD) growth assembly with optimization of argon flow. As a result the effective lifespan of the crucible was increased at least fivefold.

Original language	English
Pages (from-to)	2788-2791
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.36.2788
Publication status	Published - 1997 May

Keywords

Fiber crystal
Germanium
Melt
Micro-pulling-down method
Precipitation
Silicon
Silicon carbide

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.36.2788

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title = "Origin of SiC precipitation during the micro-pulling-down processing of Si-Ge fibers",

abstract = "The problem of SiC precipitation during micro-pulling-down growth of Si-Ge mixed crystals has been analyzed as an important constraint of the technique. Three mechanisms of SiC microcrystal formation have been discussed. The solute transport in the melt and the dependence of the rate of Si-Ge melt evaporation on melt composition have been investigated. The troublesome influence of CO on SiC formation has been reduced by modification of the micro-pulling-down (μ-PD) growth assembly with optimization of argon flow. As a result the effective lifespan of the crucible was increased at least fivefold.",

keywords = "Fiber crystal, Germanium, Melt, Micro-pulling-down method, Precipitation, Silicon, Silicon carbide",

author = "Epelbaum, {Boris M.} and Gurjiyants, {Pavel A.} and Katsuhiko Inaba and Kiyoshi Shimamura and Satoshi Uda and Junichi Kon and Tsuguo Fukuda",

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T1 - Origin of SiC precipitation during the micro-pulling-down processing of Si-Ge fibers

AU - Epelbaum, Boris M.

AU - Gurjiyants, Pavel A.

AU - Inaba, Katsuhiko

AU - Shimamura, Kiyoshi

AU - Uda, Satoshi

AU - Kon, Junichi

AU - Fukuda, Tsuguo

PY - 1997/5

Y1 - 1997/5

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AB - The problem of SiC precipitation during micro-pulling-down growth of Si-Ge mixed crystals has been analyzed as an important constraint of the technique. Three mechanisms of SiC microcrystal formation have been discussed. The solute transport in the melt and the dependence of the rate of Si-Ge melt evaporation on melt composition have been investigated. The troublesome influence of CO on SiC formation has been reduced by modification of the micro-pulling-down (μ-PD) growth assembly with optimization of argon flow. As a result the effective lifespan of the crucible was increased at least fivefold.

KW - Fiber crystal

KW - Germanium

KW - Melt

KW - Micro-pulling-down method

KW - Precipitation

KW - Silicon

KW - Silicon carbide

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Origin of SiC precipitation during the micro-pulling-down processing of Si-Ge fibers

Abstract

Keywords

ASJC Scopus subject areas

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