Origin of SiC precipitation during the micro-pulling-down processing of Si-Ge fibers

Boris M. Epelbaum, Pavel A. Gurjiyants, Katsuhiko Inaba, Kiyoshi Shimamura, Satoshi Uda, Junichi Kon, Tsuguo Fukuda

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The problem of SiC precipitation during micro-pulling-down growth of Si-Ge mixed crystals has been analyzed as an important constraint of the technique. Three mechanisms of SiC microcrystal formation have been discussed. The solute transport in the melt and the dependence of the rate of Si-Ge melt evaporation on melt composition have been investigated. The troublesome influence of CO on SiC formation has been reduced by modification of the micro-pulling-down (μ-PD) growth assembly with optimization of argon flow. As a result the effective lifespan of the crucible was increased at least fivefold.

Original languageEnglish
Pages (from-to)2788-2791
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 A
Publication statusPublished - 1997 May


  • Fiber crystal
  • Germanium
  • Melt
  • Micro-pulling-down method
  • Precipitation
  • Silicon
  • Silicon carbide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Origin of SiC precipitation during the micro-pulling-down processing of Si-Ge fibers'. Together they form a unique fingerprint.

Cite this