TY - GEN
T1 - Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS
AU - Wang, B.
AU - Tanaka, S.
AU - Guo, B.
AU - Vereecke, G.
AU - Severi, S.
AU - Witvrouw, A.
AU - Wevers, M.
AU - De Wolf, I.
PY - 2012
Y1 - 2012
N2 - MEMs typically have moving parts that are sensitive to the environmental pressure during operation. Many types of microsystem devices need vacuum in order to operate properly. However, making a high vacuum MEMS package, which maintains this vacuum over a long time, is difficult. Sources of gas inside a MEMS package are mainly due to external leakage or in-diffusion and/or internal materials outgassing. This paper reports on a systematical study of the outgassing properties of typical materials (Table 1) used for imec's polycrystalline silicon-germanium (poly-SiGe) based MEMS thin film vacuum package technology.
AB - MEMs typically have moving parts that are sensitive to the environmental pressure during operation. Many types of microsystem devices need vacuum in order to operate properly. However, making a high vacuum MEMS package, which maintains this vacuum over a long time, is difficult. Sources of gas inside a MEMS package are mainly due to external leakage or in-diffusion and/or internal materials outgassing. This paper reports on a systematical study of the outgassing properties of typical materials (Table 1) used for imec's polycrystalline silicon-germanium (poly-SiGe) based MEMS thin film vacuum package technology.
UR - http://www.scopus.com/inward/record.url?scp=84869058605&partnerID=8YFLogxK
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U2 - 10.1109/IPFA.2012.6306325
DO - 10.1109/IPFA.2012.6306325
M3 - Conference contribution
AN - SCOPUS:84869058605
SN - 9781467309806
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
BT - 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
T2 - 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
Y2 - 2 July 2012 through 6 July 2012
ER -