Overvoltage self-protection structure of a light-triggered thyristor

Shuji Katoh; Saigo Yamazumi; Atsuo Watanabe; Kensuke Amemiya

doi:10.1109/16.915727

Overvoltage self-protection structure of a light-triggered thyristor

Shuji Katoh, Saigo Yamazumi, Atsuo Watanabe, Kensuke Amemiya

Center for Innovative Integrated Electronic Systems (CIES)

Hitachi, Ltd.

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Overvoltage self-protection with a slight temperature dependence on triggering temperature was realized for a light-triggered thyristor. This thyristor had a narrow, low concentration player in the light-triggered region. This low concentration area was formed by ion implantation. The thyristor was triggered when the depletion layer extended to near the n-emitter. The triggering voltage could be controlled by the ion implantation dose.

Original language	English
Pages (from-to)	789-793
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	4
DOIs	https://doi.org/10.1109/16.915727
Publication status	Published - 2001 Apr

Keywords

Photo thyristors
Power semiconductor devices
Thyristors

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10.1109/16.915727

Cite this

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abstract = "Overvoltage self-protection with a slight temperature dependence on triggering temperature was realized for a light-triggered thyristor. This thyristor had a narrow, low concentration player in the light-triggered region. This low concentration area was formed by ion implantation. The thyristor was triggered when the depletion layer extended to near the n-emitter. The triggering voltage could be controlled by the ion implantation dose.",

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AB - Overvoltage self-protection with a slight temperature dependence on triggering temperature was realized for a light-triggered thyristor. This thyristor had a narrow, low concentration player in the light-triggered region. This low concentration area was formed by ion implantation. The thyristor was triggered when the depletion layer extended to near the n-emitter. The triggering voltage could be controlled by the ion implantation dose.

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Overvoltage self-protection structure of a light-triggered thyristor

Abstract

Keywords

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