Overvoltage self-protection structure of a light-triggered thyristor

Shuji Katoh, Saigo Yamazumi, Atsuo Watanabe, Kensuke Amemiya

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Overvoltage self-protection with a slight temperature dependence on triggering temperature was realized for a light-triggered thyristor. This thyristor had a narrow, low concentration player in the light-triggered region. This low concentration area was formed by ion implantation. The thyristor was triggered when the depletion layer extended to near the n-emitter. The triggering voltage could be controlled by the ion implantation dose.

Original languageEnglish
Pages (from-to)789-793
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number4
Publication statusPublished - 2001 Apr


  • Photo thyristors
  • Power semiconductor devices
  • Thyristors


Dive into the research topics of 'Overvoltage self-protection structure of a light-triggered thyristor'. Together they form a unique fingerprint.

Cite this