Oxidation processes on the H2O-chemisorbed Si(100) surface studied by in-situ infrared spectroscopy

Michio Niwano, Miyako Terashi, Masanori Shinohara, Daisei Shoji, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The oxidation processes on the Si(100)-(2 x 1) surface during exposure to H2O and subsequent thermal annealing were investigated using in-situ infrared absorption spectroscopy in the multiple internal reflection geometry. Exposure to H2O results in the oxidation of Si-Si bonds (dimer bond and backbonds) even at room temperature. Upon annealing up to 500°C the dimer bond is cleaved to produce dihydride Si (Si-H2), and the backbonds are attacked by atomic oxygen released from the surface Si-OH species to produce intermediate oxidation species such as SiH2(SiO). We demonstrate that most of the hydride species are driven out from the surface by annealing up to 500°C, but an intermediate oxidation species (SiH(O3)) persists up to 600°C. A model of wet oxidation is presented in which dissociation of water molecules, attack of the Si-Si bonds by atomic oxygen and hydrogen and hydrogen desorption are involved in the oxidation.

Original languageEnglish
Pages (from-to)364-370
Number of pages7
JournalSurface Science
Issue number3
Publication statusPublished - 1998 Apr 10
Externally publishedYes


  • Chemisorption
  • Infrared
  • Oxidation
  • Reflection spectroscopy
  • Silicon
  • Water

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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