Oxidation state during growth of very thin oxide on Ti(0001) surface

Yuji Takakuwa; Shinji Ishidzuka; Akitaka Yoshigoe; Yuden Teraoka; Kousuke Moritani; Syuichi Ogawa; Yoshiyuki Mizuno; Hideki Tonda; Teiichi Homma

doi:10.3131/jvsj.47.457

Oxidation state during growth of very thin oxide on Ti(0001) surface

Yuji Takakuwa, Shinji Ishidzuka, Akitaka Yoshigoe, Yuden Teraoka, Kousuke Moritani, Syuichi Ogawa, Yoshiyuki Mizuno, Hideki Tonda, Teiichi Homma

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article › peer-review

Abstract

The oxidation reaction on the Ti(0001) surface at 400°C and 3.7 × 10^-6 Pa of O₂ pressure was observed in real time by photoelectron spectroscopy using synchrotron radiation to investigate the oxygen uptake curve and oxidation state during growth of very thin oxide. The oxygen uptake curve increased rapidly with a plateau at O₂ doses of 45-85 L, where the Ti 2p intensity for the metallic Ti component due to the substrate also showed a plateau between rapid decreases. The restart of oxide growth following the plateau was observed to be associated with a drastic change of the oxidation state from TiO to TLO₂. Thus high-temperature oxidation on the Ti(0001) surface progresses through the initial rapid growth with preferential appearance of TiO and Ti₂O₃, subsequent temporary saturation of oxide growth and then rapid growth of oxide with significant changes of the oxidation state.

Original language	English
Pages (from-to)	457-461
Number of pages	5
Journal	Shinku/Journal of the Vacuum Society of Japan
Volume	47
Issue number	6
DOIs	https://doi.org/10.3131/jvsj.47.457
Publication status	Published - 2004

Access to Document

10.3131/jvsj.47.457

Cite this

@article{0d13c73d1b0d48d7afac54a373ccbdfa,

title = "Oxidation state during growth of very thin oxide on Ti(0001) surface",

abstract = "The oxidation reaction on the Ti(0001) surface at 400°C and 3.7 × 10-6 Pa of O2 pressure was observed in real time by photoelectron spectroscopy using synchrotron radiation to investigate the oxygen uptake curve and oxidation state during growth of very thin oxide. The oxygen uptake curve increased rapidly with a plateau at O2 doses of 45-85 L, where the Ti 2p intensity for the metallic Ti component due to the substrate also showed a plateau between rapid decreases. The restart of oxide growth following the plateau was observed to be associated with a drastic change of the oxidation state from TiO to TLO2. Thus high-temperature oxidation on the Ti(0001) surface progresses through the initial rapid growth with preferential appearance of TiO and Ti2O3, subsequent temporary saturation of oxide growth and then rapid growth of oxide with significant changes of the oxidation state.",

author = "Yuji Takakuwa and Shinji Ishidzuka and Akitaka Yoshigoe and Yuden Teraoka and Kousuke Moritani and Syuichi Ogawa and Yoshiyuki Mizuno and Hideki Tonda and Teiichi Homma",

year = "2004",

doi = "10.3131/jvsj.47.457",

language = "English",

volume = "47",

pages = "457--461",

journal = "Shinku/Journal of the Vacuum Society of Japan",

issn = "0559-8516",

publisher = "Shinku Kyokai",

number = "6",

}

TY - JOUR

T1 - Oxidation state during growth of very thin oxide on Ti(0001) surface

AU - Takakuwa, Yuji

AU - Ishidzuka, Shinji

AU - Yoshigoe, Akitaka

AU - Teraoka, Yuden

AU - Moritani, Kousuke

AU - Ogawa, Syuichi

AU - Mizuno, Yoshiyuki

AU - Tonda, Hideki

AU - Homma, Teiichi

PY - 2004

Y1 - 2004

N2 - The oxidation reaction on the Ti(0001) surface at 400°C and 3.7 × 10-6 Pa of O2 pressure was observed in real time by photoelectron spectroscopy using synchrotron radiation to investigate the oxygen uptake curve and oxidation state during growth of very thin oxide. The oxygen uptake curve increased rapidly with a plateau at O2 doses of 45-85 L, where the Ti 2p intensity for the metallic Ti component due to the substrate also showed a plateau between rapid decreases. The restart of oxide growth following the plateau was observed to be associated with a drastic change of the oxidation state from TiO to TLO2. Thus high-temperature oxidation on the Ti(0001) surface progresses through the initial rapid growth with preferential appearance of TiO and Ti2O3, subsequent temporary saturation of oxide growth and then rapid growth of oxide with significant changes of the oxidation state.

AB - The oxidation reaction on the Ti(0001) surface at 400°C and 3.7 × 10-6 Pa of O2 pressure was observed in real time by photoelectron spectroscopy using synchrotron radiation to investigate the oxygen uptake curve and oxidation state during growth of very thin oxide. The oxygen uptake curve increased rapidly with a plateau at O2 doses of 45-85 L, where the Ti 2p intensity for the metallic Ti component due to the substrate also showed a plateau between rapid decreases. The restart of oxide growth following the plateau was observed to be associated with a drastic change of the oxidation state from TiO to TLO2. Thus high-temperature oxidation on the Ti(0001) surface progresses through the initial rapid growth with preferential appearance of TiO and Ti2O3, subsequent temporary saturation of oxide growth and then rapid growth of oxide with significant changes of the oxidation state.

UR - http://www.scopus.com/inward/record.url?scp=33750825516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750825516&partnerID=8YFLogxK

U2 - 10.3131/jvsj.47.457

DO - 10.3131/jvsj.47.457

M3 - Article

AN - SCOPUS:33750825516

SN - 0559-8516

VL - 47

SP - 457

EP - 461

JO - Shinku/Journal of the Vacuum Society of Japan

JF - Shinku/Journal of the Vacuum Society of Japan

IS - 6

ER -

Oxidation state during growth of very thin oxide on Ti(0001) surface

Abstract

Access to Document

Other files and links

Fingerprint

Cite this