Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman (VB) method

T. Taishi; T. Hayashi; N. Bamba; Yutaka Ohno; Ichiro Yonenaga; K. Hoshikawa

doi:10.1016/j.physb.2007.08.206

Oxygen defects in langasite (La₃Ga₅SiO₁₄) single crystal grown by vertical Bridgman (VB) method

T. Taishi, T. Hayashi, N. Bamba, Yutaka Ohno, Ichiro Yonenaga, K. Hoshikawa

Materials Design Division

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Defects related to oxygen and other impurities in piezoelectric langasite (La₃Ga₅SiO₁₄; LGS) single crystals grown by the vertical Bridgman (VB) method was investigated. The resistivity of an LGS crystal grown in an Ar atmosphere was about one-order higher than that grown in air. However, after annealing in air it decreased to the same level as that of LGS crystal grown in air. The results of optical transmission spectra showed a broad adsorption peak around 500 nm, corresponding to 2.5 eV of energy level, in LGS crystals grown in air and grown in an Ar atmosphere. Since VB-grown LGS crystal was p-type, excess interstitial oxygen atoms, not oxygen vacancies, operate as an acceptor in the VB-LGS crystal.

Original language	English
Pages (from-to)	437-440
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	401-402
DOIs	https://doi.org/10.1016/j.physb.2007.08.206
Publication status	Published - 2007 Dec 15

Keywords

Interstitial
Langasite single crystal
Oxygen defects
Resistivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2007.08.206

Cite this

@article{b1d9c869f50d49caa28399678f00c85b,

title = "Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman (VB) method",

abstract = "Defects related to oxygen and other impurities in piezoelectric langasite (La3Ga5SiO14; LGS) single crystals grown by the vertical Bridgman (VB) method was investigated. The resistivity of an LGS crystal grown in an Ar atmosphere was about one-order higher than that grown in air. However, after annealing in air it decreased to the same level as that of LGS crystal grown in air. The results of optical transmission spectra showed a broad adsorption peak around 500 nm, corresponding to 2.5 eV of energy level, in LGS crystals grown in air and grown in an Ar atmosphere. Since VB-grown LGS crystal was p-type, excess interstitial oxygen atoms, not oxygen vacancies, operate as an acceptor in the VB-LGS crystal.",

keywords = "Interstitial, Langasite single crystal, Oxygen defects, Resistivity",

author = "T. Taishi and T. Hayashi and N. Bamba and Yutaka Ohno and Ichiro Yonenaga and K. Hoshikawa",

year = "2007",

month = dec,

day = "15",

doi = "10.1016/j.physb.2007.08.206",

language = "English",

volume = "401-402",

pages = "437--440",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Oxygen defects in langasite (La3Ga5SiO14) single crystal grown by vertical Bridgman (VB) method

AU - Taishi, T.

AU - Hayashi, T.

AU - Bamba, N.

AU - Ohno, Yutaka

AU - Yonenaga, Ichiro

AU - Hoshikawa, K.

PY - 2007/12/15

Y1 - 2007/12/15

N2 - Defects related to oxygen and other impurities in piezoelectric langasite (La3Ga5SiO14; LGS) single crystals grown by the vertical Bridgman (VB) method was investigated. The resistivity of an LGS crystal grown in an Ar atmosphere was about one-order higher than that grown in air. However, after annealing in air it decreased to the same level as that of LGS crystal grown in air. The results of optical transmission spectra showed a broad adsorption peak around 500 nm, corresponding to 2.5 eV of energy level, in LGS crystals grown in air and grown in an Ar atmosphere. Since VB-grown LGS crystal was p-type, excess interstitial oxygen atoms, not oxygen vacancies, operate as an acceptor in the VB-LGS crystal.

AB - Defects related to oxygen and other impurities in piezoelectric langasite (La3Ga5SiO14; LGS) single crystals grown by the vertical Bridgman (VB) method was investigated. The resistivity of an LGS crystal grown in an Ar atmosphere was about one-order higher than that grown in air. However, after annealing in air it decreased to the same level as that of LGS crystal grown in air. The results of optical transmission spectra showed a broad adsorption peak around 500 nm, corresponding to 2.5 eV of energy level, in LGS crystals grown in air and grown in an Ar atmosphere. Since VB-grown LGS crystal was p-type, excess interstitial oxygen atoms, not oxygen vacancies, operate as an acceptor in the VB-LGS crystal.

KW - Interstitial

KW - Langasite single crystal

KW - Oxygen defects

KW - Resistivity

UR - http://www.scopus.com/inward/record.url?scp=36049028045&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36049028045&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2007.08.206

DO - 10.1016/j.physb.2007.08.206

M3 - Article

AN - SCOPUS:36049028045

SN - 0921-4526

VL - 401-402

SP - 437

EP - 440

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -