Oxygen doped Ge crystals Czochralski-grown from the B2O 3-fully-covered melt

Toshinori Taishi, Hideaki Ise, Yu Murao, Takayuki Ohsawa, Yuki Tokumoto, Yutaka Ohno, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Local vibrations of oxygen in Ge crystals grown from a melt fully covered by B2O3 were evaluated by Fourier-transform infrared spectroscopy. Ge single crystals containing oxygen were grown by the Czochralski method under various growth conditions. Oxygen concentrations in the crystals were determined to be in the range between 8.5 × 1015 and 5.5 × 1017 cm-3 from the infrared absorption at 855 cm-1 originating in local vibration of Ge-Oi-Ge quasi-molecules. Absorption peaks relating to GeOx, SiOx and Si-Oi-Si were not detected in the as-grown crystals. The calibration coefficient for determining oxygen concentration in Ge crystals from the absorption peak intensity at 1264 cm-1 was estimated to be 1.15 × 1019 cm-2.

Original languageEnglish
Pages (from-to)496-498
Number of pages3
JournalMicroelectronic Engineering
Issue number4
Publication statusPublished - 2011 Apr


  • Concentration
  • Crystal growth
  • Germanium
  • Infrared spectra
  • Oxygen


Dive into the research topics of 'Oxygen doped Ge crystals Czochralski-grown from the B2O 3-fully-covered melt'. Together they form a unique fingerprint.

Cite this