Oxygen-isotope-doped silicon crystals grown by a floating zone method

Koichi Kakimoto, Katsuto Tanahashi, Hiroshi Yamada-Kaneta, Tohru Nagasawa

Research output: Contribution to journalArticlepeer-review

Abstract

We have grown silicon single crystals doped with isotope oxygen of 18O by using a floating zone method with two ellipsoid mirrors. Two lamps through a quartz tube heated the crystal for melting during crystal growth. The isotope oxygen of 18O was doped from the gas phase with argon gas during crystal growth. The isotope of 18O was detected by using Fourier transformation of infrared (FTIR) spectroscopy at room temperature. We succeed in the doping of the isotope of 18O from the gas phase through a liquid-gas interface.

Original languageEnglish
Pages (from-to)310-312
Number of pages3
JournalJournal of Crystal Growth
Volume304
Issue number2
DOIs
Publication statusPublished - 2007 Jun 15

Keywords

  • A1. Floating zone
  • A2. Single crystal growth
  • B1. Isotope oxygen
  • B2. Semiconductor silicon

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