Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with

Y. Takakuwa; F. Ishida; T. Kawawa

doi:10.1109/IMNC.2001.984113

Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with

Y. Takakuwa, F. Ishida, T. Kawawa

Micro System Integration Center (μSIC)

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2001 International Microprocesses and Nanotechnology Conference, MNC 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	110-111
Number of pages	2
ISBN (Electronic)	4891140178, 9784891140175
DOIs	https://doi.org/10.1109/IMNC.2001.984113
Publication status	Published - 2001
Event	International Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan Duration: 2001 Oct 31 → 2001 Nov 2

Publication series

Name	2001 International Microprocesses and Nanotechnology Conference, MNC 2001

Conference

Conference	International Microprocesses and Nanotechnology Conference, MNC 2001
Country/Territory	Japan
City	Shimane
Period	01/10/31 → 01/11/2

Access to Document

10.1109/IMNC.2001.984113

Cite this

Takakuwa, Y., Ishida, F., & Kawawa, T. (2001). Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 110-111). Article 984113 (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984113

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title = "Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with",

author = "Y. Takakuwa and F. Ishida and T. Kawawa",

year = "2001",

doi = "10.1109/IMNC.2001.984113",

language = "English",

series = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "110--111",

booktitle = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",

address = "United States",

note = "International Microprocesses and Nanotechnology Conference, MNC 2001 ; Conference date: 31-10-2001 Through 02-11-2001",

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Takakuwa, Y, Ishida, F & Kawawa, T 2001, Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with. in 2001 International Microprocesses and Nanotechnology Conference, MNC 2001., 984113, 2001 International Microprocesses and Nanotechnology Conference, MNC 2001, Institute of Electrical and Electronics Engineers Inc., pp. 110-111, International Microprocesses and Nanotechnology Conference, MNC 2001, Shimane, Japan, 01/10/31. https://doi.org/10.1109/IMNC.2001.984113

Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with. / Takakuwa, Y.; Ishida, F.; Kawawa, T.
2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 110-111 984113 (2001 International Microprocesses and Nanotechnology Conference, MNC 2001).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with

AU - Takakuwa, Y.

AU - Ishida, F.

AU - Kawawa, T.

PY - 2001

Y1 - 2001

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U2 - 10.1109/IMNC.2001.984113

DO - 10.1109/IMNC.2001.984113

M3 - Conference contribution

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T3 - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001

SP - 110

EP - 111

BT - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2001

Y2 - 31 October 2001 through 2 November 2001

ER -

Takakuwa Y, Ishida F, Kawawa T. Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 110-111. 984113. (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). doi: 10.1109/IMNC.2001.984113

Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with

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