TY - JOUR
T1 - Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1-x)2O3 films
AU - Wakabayashi, Ryo
AU - Oshima, Takayoshi
AU - Hattori, Mai
AU - Sasaki, Kohei
AU - Masui, Takekazu
AU - Kuramata, Akito
AU - Yamakoshi, Shigenobu
AU - Yoshimatsu, Kohei
AU - Ohtomo, Akira
N1 - Funding Information:
This work was supported by a JSPS Grant-in-Aid for Scientific Research, MEXT the Element Strategy Initiative Project, and a research grant from Nippon Sheet Glass Foundation for Materials Science and Engineering.
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - Abstract We report on impacts of oxygen-radical (O∗) atmosphere for pulsed-laser deposition (PLD) of β-Ga2O3 and β-(AlxGa1-x)2O3 films on (010) β-Ga2O3 substrate in comparison with conventional PLD in O2 atmosphere. Severe sublimation of Ga species arising from insufficient oxidation in the O2 atmosphere resulted in substantial decrease in growth rate of the homoepitaxial films and condensation of Al content in the (AlxGa1-x)2O3 films. In the case of O∗-assisted PLD, it was found that the growth rate of homoepitaxial films greatly recovered, and the Al content remained nearly identical to that in the target. Moreover, the use of O∗ allowed to reduce surface roughness of homoepitaxial films. These results indicate that O∗-assisted PLD is a powerful tool for fabricating β-Ga2O3-based heterostructures.
AB - Abstract We report on impacts of oxygen-radical (O∗) atmosphere for pulsed-laser deposition (PLD) of β-Ga2O3 and β-(AlxGa1-x)2O3 films on (010) β-Ga2O3 substrate in comparison with conventional PLD in O2 atmosphere. Severe sublimation of Ga species arising from insufficient oxidation in the O2 atmosphere resulted in substantial decrease in growth rate of the homoepitaxial films and condensation of Al content in the (AlxGa1-x)2O3 films. In the case of O∗-assisted PLD, it was found that the growth rate of homoepitaxial films greatly recovered, and the Al content remained nearly identical to that in the target. Moreover, the use of O∗ allowed to reduce surface roughness of homoepitaxial films. These results indicate that O∗-assisted PLD is a powerful tool for fabricating β-Ga2O3-based heterostructures.
KW - A3: Pulsed-laser deposition
KW - B1: Alloys
KW - B1: GaO
KW - B2: Semiconductor aluminum compounds
KW - B2: Semiconductor gallium compounds
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U2 - 10.1016/j.jcrysgro.2015.05.005
DO - 10.1016/j.jcrysgro.2015.05.005
M3 - Article
AN - SCOPUS:84930631449
SN - 0022-0248
VL - 424
SP - 77
EP - 79
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 22856
ER -