Oxygen radical treatment applied to ferroelectric thin films

Ichirou Takahashi, Hiroyuki Sakurai, Atsuhiko Yamada, Kiyoshi Funaiwa, Kentarou Hirai, Shinichi Urabe, Tetsuya Goto, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A low dielectric constant ferroelectric Sr 2 (Ta 1-x ,Nb x ) 2 O 7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma PVD and an oxygen radical treatment using microwave-excited (2.45GHz) high-density (>10 12 cm -3 ) low electron temperature (<1eV) Kr/O 2 plasma. Oxygen radical treatment can effectively oxidize ferroelectric film at 400°C.

Original languageEnglish
Pages (from-to)239-245
Number of pages7
JournalApplied Surface Science
Issue number1-4 SPEC.
Publication statusPublished - 2003 Jun 30


  • Kr/O plasma
  • Low temperature treatment
  • Oxidizing ferroelectric effectively
  • Oxygen radical treatment
  • Sr (Ta ,Nb ) O (STN)


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