TY - JOUR
T1 - Oxygen radical treatment applied to ferroelectric thin films
AU - Takahashi, Ichirou
AU - Sakurai, Hiroyuki
AU - Yamada, Atsuhiko
AU - Funaiwa, Kiyoshi
AU - Hirai, Kentarou
AU - Urabe, Shinichi
AU - Goto, Tetsuya
AU - Hirayama, Masaki
AU - Teramoto, Akinobu
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2003/6/30
Y1 - 2003/6/30
N2 - A low dielectric constant ferroelectric Sr 2 (Ta 1-x ,Nb x ) 2 O 7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma PVD and an oxygen radical treatment using microwave-excited (2.45GHz) high-density (>10 12 cm -3 ) low electron temperature (<1eV) Kr/O 2 plasma. Oxygen radical treatment can effectively oxidize ferroelectric film at 400°C.
AB - A low dielectric constant ferroelectric Sr 2 (Ta 1-x ,Nb x ) 2 O 7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma PVD and an oxygen radical treatment using microwave-excited (2.45GHz) high-density (>10 12 cm -3 ) low electron temperature (<1eV) Kr/O 2 plasma. Oxygen radical treatment can effectively oxidize ferroelectric film at 400°C.
KW - Kr/O plasma
KW - Low temperature treatment
KW - Oxidizing ferroelectric effectively
KW - Oxygen radical treatment
KW - Sr (Ta ,Nb ) O (STN)
UR - http://www.scopus.com/inward/record.url?scp=0038345967&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038345967&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(03)00424-0
DO - 10.1016/S0169-4332(03)00424-0
M3 - Article
AN - SCOPUS:0038345967
SN - 0169-4332
VL - 216
SP - 239
EP - 245
JO - Applied Surface Science
JF - Applied Surface Science
IS - 1-4 SPEC.
ER -