Silicon single crystals were grown in crucibles with and without a carbon sheet at the bottom to investigate how oxygen dissociates from the crucible and transfers to the crystals. Oxygen concentration in the crystals grown in the sheet-attached crucible was lower than that of crystals grown in the sheetless crucible when crucible rotation rate was high. A three-dimensional numerical simulation clarified that with a high crucible rotation rate, about 20% of the oxygen in the grown crystals was transferred by convection in the melt from the bottom of the crucible. For a low crucible rotation rate, a melt with a small oxygen concentration was directly transferred from the gas-melt interface to the crystal-melt interface; therefore, oxygen concentration in crystals grown at a low crucible rotation rate was lower than that for crystals grown at a high rotation rate.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1996 Aug|
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry