TY - JOUR
T1 - Oxygen-transport phenomena in a small silicon Czochralski furnace
AU - Li, You Rong
AU - Li, Ming Wei
AU - Imaishi, Nobuyuki
AU - Akiyama, Yasunobu
AU - Tsukada, Takao
N1 - Funding Information:
This work was partly supported by JSPS Research for the Future Program in the field of Atomic Scale Surface and Interface Dynamics and partly by a grant-in-aid for scientific research through JSPS.
PY - 2004/7/1
Y1 - 2004/7/1
N2 - In order to understand the basic characteristics of the gas-phase mass-transfer coefficient (kg) in a small silicon Czochralski (Cz) furnace, a very crude model was proposed and the results were correlated by the Sherwood number as a function of Reynolds number. It was confirmed that by installing a gas guide in the hot zone, the mass transfer coefficient was significantly enhanced. A set of global analyses of small Cz furnaces was conducted with different values of diffusivity of SiO in the gas phase (D SiO) and of oxygen in the melt phase (DO) in order to elucidate which rate process controls the average oxygen concentration ([O] ave) in the grown crystal. These simulations revealed that in these small Cz furnaces, [O]ave is dependent on the gas phase mass transfer rate and melt flow patterns. A decrease in DSiO causes an increase in [O]ave. An increase in DO tends to increase [O] ave slightly in most cases.
AB - In order to understand the basic characteristics of the gas-phase mass-transfer coefficient (kg) in a small silicon Czochralski (Cz) furnace, a very crude model was proposed and the results were correlated by the Sherwood number as a function of Reynolds number. It was confirmed that by installing a gas guide in the hot zone, the mass transfer coefficient was significantly enhanced. A set of global analyses of small Cz furnaces was conducted with different values of diffusivity of SiO in the gas phase (D SiO) and of oxygen in the melt phase (DO) in order to elucidate which rate process controls the average oxygen concentration ([O] ave) in the grown crystal. These simulations revealed that in these small Cz furnaces, [O]ave is dependent on the gas phase mass transfer rate and melt flow patterns. A decrease in DSiO causes an increase in [O]ave. An increase in DO tends to increase [O] ave slightly in most cases.
KW - A1. Computer simulation
KW - A1. Fluid flow
KW - A1. Heat transfer
KW - A1. Mass transfer
KW - A2. Czochralski method
KW - B2. Diffusivity
KW - B2. Finite-element method
KW - B2. Oxygen transport
KW - B2. Semiconducting silicon
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U2 - 10.1016/j.jcrysgro.2004.04.049
DO - 10.1016/j.jcrysgro.2004.04.049
M3 - Article
AN - SCOPUS:2942607410
SN - 0022-0248
VL - 267
SP - 466
EP - 474
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3-4
ER -