P-23: The contact properties an d TFT structures of a-IGZO TFTs combined with cu-mn alloy electrodes

Pil Sang Yun; Mayumi Naito; Ryo Kumagai; Yuji Sutou; Junichi Koike

P-23: The contact properties an d TFT structures of a-IGZO TFTs combined with cu-mn alloy electrodes

Pil Sang Yun, Mayumi Naito, Ryo Kumagai, Yuji Sutou, Junichi Koike

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical properties and microstructures were investigated between a-IGZO and metal electrodes. We should use Cu-Mn or Ti electrodes as the contact promoter and diffusion barrier. Ohmic behaviors were obtained with Cu-Mn and Ti after annealing at 250 °C. TFT showed high performance with theses. This is due to reduced a-IGZO and oxygen deficient region.

Original language	English
Pages (from-to)	1177-1180
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	42 1
Publication status	Published - 2011 Jun 1

ASJC Scopus subject areas

Engineering(all)

Cite this

@article{0fd4828f93054a5ba7a7aa9eff1218e4,

title = "P-23: The contact properties an d TFT structures of a-IGZO TFTs combined with cu-mn alloy electrodes",

abstract = "Electrical properties and microstructures were investigated between a-IGZO and metal electrodes. We should use Cu-Mn or Ti electrodes as the contact promoter and diffusion barrier. Ohmic behaviors were obtained with Cu-Mn and Ti after annealing at 250 °C. TFT showed high performance with theses. This is due to reduced a-IGZO and oxygen deficient region.",

author = "Yun, {Pil Sang} and Mayumi Naito and Ryo Kumagai and Yuji Sutou and Junichi Koike",

year = "2011",

month = jun,

day = "1",

language = "English",

volume = "42 1",

pages = "1177--1180",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

}

TY - JOUR

T1 - P-23

T2 - The contact properties an d TFT structures of a-IGZO TFTs combined with cu-mn alloy electrodes

AU - Yun, Pil Sang

AU - Naito, Mayumi

AU - Kumagai, Ryo

AU - Sutou, Yuji

AU - Koike, Junichi

PY - 2011/6/1

Y1 - 2011/6/1

N2 - Electrical properties and microstructures were investigated between a-IGZO and metal electrodes. We should use Cu-Mn or Ti electrodes as the contact promoter and diffusion barrier. Ohmic behaviors were obtained with Cu-Mn and Ti after annealing at 250 °C. TFT showed high performance with theses. This is due to reduced a-IGZO and oxygen deficient region.

AB - Electrical properties and microstructures were investigated between a-IGZO and metal electrodes. We should use Cu-Mn or Ti electrodes as the contact promoter and diffusion barrier. Ohmic behaviors were obtained with Cu-Mn and Ti after annealing at 250 °C. TFT showed high performance with theses. This is due to reduced a-IGZO and oxygen deficient region.

UR - http://www.scopus.com/inward/record.url?scp=84863206244&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863206244&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84863206244

SN - 0097-966X

VL - 42 1

SP - 1177

EP - 1180

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

ER -

P-23: The contact properties an d TFT structures of a-IGZO TFTs combined with cu-mn alloy electrodes

Abstract

ASJC Scopus subject areas

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