P-33: Cu-Mn electrodes for a-Si TFT and its electrical characteristics

Junichi Koike, Kazuhiko Hirota, Mayumi Naito, Pilsang Yun, Yuji Sutou

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Cu-Mn alloy was used for electrode materials for amorphous Si TFT. The gate electrode showed a good adhesion to glass and low resistivity. The source/drain electrodes showed a good diffusion barrier property, Ohmic contact, and a low contact resistivity. TFT structure showed the ON/OFF ratio of better than 106.

Original languageEnglish
Pages (from-to)1343-1346
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume41 1
Publication statusPublished - 2010 May


Dive into the research topics of 'P-33: Cu-Mn electrodes for a-Si TFT and its electrical characteristics'. Together they form a unique fingerprint.

Cite this