P-N junction with donor and acceptor encapsulated single-walled carbon nanotubes

Toshiaki Kato; Rikizo Hatakeyama; Jun Shishido; Wataru Oohara; Kazuyuki Tohji

doi:10.1063/1.3207742

P-N junction with donor and acceptor encapsulated single-walled carbon nanotubes

Toshiaki Kato, Rikizo Hatakeyama, Jun Shishido, Wataru Oohara, Kazuyuki Tohji

ENG - Electronic Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Ultimate one-dimensional heterojunctions of electron donor and acceptor materials have been realized within the inner hollow space of a single-walled carbon nanotube (SWNT). The heterojunction structures of Cs/I and Cs/ C60 inside SWNTs (Cs/I@SWNTs, Cs/ C60 @SWNTs) yield the air-stable rectifying performance. Clear tunneling currents through the p-n junction barrier could be also detected only for Cs/I@SWNTs, which is explained by the difference of depletion layer structures. Based on a potential calculation, symmetrical and asymmetrical depletion layers were found to be formed in Cs/I@SWNTs and Cs/ C60 @SWNTs, respectively. Low temperature measurements also supply evidence of asymmetric depletion layer formation in Cs/ C60 @SWNTs.

Original language	English
Article number	083109
Journal	Applied Physics Letters
Volume	95
Issue number	8
DOIs	https://doi.org/10.1063/1.3207742
Publication status	Published - 2009

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@article{412d9c08070a4843b4cd9bd680fcd092,

title = "P-N junction with donor and acceptor encapsulated single-walled carbon nanotubes",

abstract = "Ultimate one-dimensional heterojunctions of electron donor and acceptor materials have been realized within the inner hollow space of a single-walled carbon nanotube (SWNT). The heterojunction structures of Cs/I and Cs/ C60 inside SWNTs (Cs/I@SWNTs, Cs/ C60 @SWNTs) yield the air-stable rectifying performance. Clear tunneling currents through the p-n junction barrier could be also detected only for Cs/I@SWNTs, which is explained by the difference of depletion layer structures. Based on a potential calculation, symmetrical and asymmetrical depletion layers were found to be formed in Cs/I@SWNTs and Cs/ C60 @SWNTs, respectively. Low temperature measurements also supply evidence of asymmetric depletion layer formation in Cs/ C60 @SWNTs.",

author = "Toshiaki Kato and Rikizo Hatakeyama and Jun Shishido and Wataru Oohara and Kazuyuki Tohji",

note = "Funding Information: We thank Professor Y. Kawazoe and K. Motomiya for their farsighted suggestion and technical support of the TEM measurement, respectively. This work is supported by Tohoku University 21st Century and Global Center of Excellence (COE) Programs, Japan. ",

year = "2009",

doi = "10.1063/1.3207742",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - P-N junction with donor and acceptor encapsulated single-walled carbon nanotubes

AU - Kato, Toshiaki

AU - Hatakeyama, Rikizo

AU - Shishido, Jun

AU - Oohara, Wataru

AU - Tohji, Kazuyuki

N1 - Funding Information: We thank Professor Y. Kawazoe and K. Motomiya for their farsighted suggestion and technical support of the TEM measurement, respectively. This work is supported by Tohoku University 21st Century and Global Center of Excellence (COE) Programs, Japan.

PY - 2009

Y1 - 2009

N2 - Ultimate one-dimensional heterojunctions of electron donor and acceptor materials have been realized within the inner hollow space of a single-walled carbon nanotube (SWNT). The heterojunction structures of Cs/I and Cs/ C60 inside SWNTs (Cs/I@SWNTs, Cs/ C60 @SWNTs) yield the air-stable rectifying performance. Clear tunneling currents through the p-n junction barrier could be also detected only for Cs/I@SWNTs, which is explained by the difference of depletion layer structures. Based on a potential calculation, symmetrical and asymmetrical depletion layers were found to be formed in Cs/I@SWNTs and Cs/ C60 @SWNTs, respectively. Low temperature measurements also supply evidence of asymmetric depletion layer formation in Cs/ C60 @SWNTs.

AB - Ultimate one-dimensional heterojunctions of electron donor and acceptor materials have been realized within the inner hollow space of a single-walled carbon nanotube (SWNT). The heterojunction structures of Cs/I and Cs/ C60 inside SWNTs (Cs/I@SWNTs, Cs/ C60 @SWNTs) yield the air-stable rectifying performance. Clear tunneling currents through the p-n junction barrier could be also detected only for Cs/I@SWNTs, which is explained by the difference of depletion layer structures. Based on a potential calculation, symmetrical and asymmetrical depletion layers were found to be formed in Cs/I@SWNTs and Cs/ C60 @SWNTs, respectively. Low temperature measurements also supply evidence of asymmetric depletion layer formation in Cs/ C60 @SWNTs.

UR - http://www.scopus.com/inward/record.url?scp=69549121944&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69549121944&partnerID=8YFLogxK

U2 - 10.1063/1.3207742

DO - 10.1063/1.3207742

M3 - Article

AN - SCOPUS:69549121944

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083109

ER -

P-N junction with donor and acceptor encapsulated single-walled carbon nanotubes

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