P-Si(1 1 1):H/ionic liquid interface investigated through a combination of electrochemical measurements and reflection high energy electron diffraction surface analysis in vacuum

Ko Watanabe; Shingo Maruyama; Yuji Matsumoto

doi:10.1016/j.cplett.2016.05.026

P-Si(1 1 1):H/ionic liquid interface investigated through a combination of electrochemical measurements and reflection high energy electron diffraction surface analysis in vacuum

Ko Watanabe, Shingo Maruyama, Yuji Matsumoto

ENG - Applied Chemistry

Tohoku University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A combination study of electrochemical measurements and reflection high energy electron diffraction (RHEED) surface analysis experiments in a vacuum was first demonstrated to characterize a p-Si(1 1 1):H/ionic liquid interface. Mott-Schottky plot analysis was made to successfully not only evaluate the acceptor density and flat band potential of the p-Si(1 1 1):H, but also get some insight into its surface states. Furthermore, the electric double layer capacitance and specific adsorption properties at the IL/Si(1 1 1):H interface as well as the electrochemical interface stability will be discussed in this paper.

Original language	English
Pages (from-to)	6-10
Number of pages	5
Journal	Chemical Physics Letters
Volume	655-656
DOIs	https://doi.org/10.1016/j.cplett.2016.05.026
Publication status	Published - 2016 Jul 1

Keywords

Electrochemistry
Interface
Ionic liquid
RHEED
Semiconductor
Vacuum

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10.1016/j.cplett.2016.05.026

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title = "P-Si(1 1 1):H/ionic liquid interface investigated through a combination of electrochemical measurements and reflection high energy electron diffraction surface analysis in vacuum",

abstract = "A combination study of electrochemical measurements and reflection high energy electron diffraction (RHEED) surface analysis experiments in a vacuum was first demonstrated to characterize a p-Si(1 1 1):H/ionic liquid interface. Mott-Schottky plot analysis was made to successfully not only evaluate the acceptor density and flat band potential of the p-Si(1 1 1):H, but also get some insight into its surface states. Furthermore, the electric double layer capacitance and specific adsorption properties at the IL/Si(1 1 1):H interface as well as the electrochemical interface stability will be discussed in this paper.",

keywords = "Electrochemistry, Interface, Ionic liquid, RHEED, Semiconductor, Vacuum",

author = "Ko Watanabe and Shingo Maruyama and Yuji Matsumoto",

note = "Funding Information: This work has been partially supported by a Grant-in-Aid for Scientific Research (No. 2036094 ) from the Ministry of Education, Culture, Sports, Science and Technology of Japan. Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved.",

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doi = "10.1016/j.cplett.2016.05.026",

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T1 - P-Si(1 1 1):H/ionic liquid interface investigated through a combination of electrochemical measurements and reflection high energy electron diffraction surface analysis in vacuum

AU - Watanabe, Ko

AU - Maruyama, Shingo

AU - Matsumoto, Yuji

N1 - Funding Information: This work has been partially supported by a Grant-in-Aid for Scientific Research (No. 2036094 ) from the Ministry of Education, Culture, Sports, Science and Technology of Japan. Publisher Copyright: © 2016 Elsevier B.V. All rights reserved.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - A combination study of electrochemical measurements and reflection high energy electron diffraction (RHEED) surface analysis experiments in a vacuum was first demonstrated to characterize a p-Si(1 1 1):H/ionic liquid interface. Mott-Schottky plot analysis was made to successfully not only evaluate the acceptor density and flat band potential of the p-Si(1 1 1):H, but also get some insight into its surface states. Furthermore, the electric double layer capacitance and specific adsorption properties at the IL/Si(1 1 1):H interface as well as the electrochemical interface stability will be discussed in this paper.

AB - A combination study of electrochemical measurements and reflection high energy electron diffraction (RHEED) surface analysis experiments in a vacuum was first demonstrated to characterize a p-Si(1 1 1):H/ionic liquid interface. Mott-Schottky plot analysis was made to successfully not only evaluate the acceptor density and flat band potential of the p-Si(1 1 1):H, but also get some insight into its surface states. Furthermore, the electric double layer capacitance and specific adsorption properties at the IL/Si(1 1 1):H interface as well as the electrochemical interface stability will be discussed in this paper.

KW - Electrochemistry

KW - Interface

KW - Ionic liquid

KW - RHEED

KW - Semiconductor

KW - Vacuum

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DO - 10.1016/j.cplett.2016.05.026

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VL - 655-656

SP - 6

EP - 10

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

P-Si(1 1 1):H/ionic liquid interface investigated through a combination of electrochemical measurements and reflection high energy electron diffraction surface analysis in vacuum

Abstract

Keywords

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