P -type field-effect transistor of NiO with electric double-layer gating

Hidekazu Shimotani, Hirotaka Suzuki, Kazunori Ueno, Masashi Kawasaki, Yoshihiro Iwasa

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78 Citations (Scopus)


Electric double-layer transistors have recently attracted a growing interest because of their low operating voltage and capacity for accumulation of high carrier density. Here, we demonstrate an electric double-layer transistor with a NiO single-crystal Mott insulator that displays a p -type behavior with a field-effect mobility and on/off ratio of 1.6× 10-4 cm 2 V s and 130, respectively. Despite relatively poor device performance, the present results demonstrate that the electric double-layer transistor is not limited to normal band insulators but is achievable using Mott insulators, in which electrostatic doping is of significant interest.

Original languageEnglish
Article number242107
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 2008


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