Parasitic effects and long term stability of InP-based HEMTs

G. Meneghesso, R. Luise, D. Buttari, A. Chini, H. Yokoyama, T. Suemitsu, E. Zanoni

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, gm(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, gm(f) dispersion).

Original languageEnglish
Pages (from-to)1715-1720
Number of pages6
JournalMicroelectronics Reliability
Issue number8-10
Publication statusPublished - 2000


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